JPS5553423A - Pattern forming - Google Patents

Pattern forming

Info

Publication number
JPS5553423A
JPS5553423A JP12708678A JP12708678A JPS5553423A JP S5553423 A JPS5553423 A JP S5553423A JP 12708678 A JP12708678 A JP 12708678A JP 12708678 A JP12708678 A JP 12708678A JP S5553423 A JPS5553423 A JP S5553423A
Authority
JP
Japan
Prior art keywords
gas
copolymer
resolution characteristics
methacrylic
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12708678A
Other languages
Japanese (ja)
Inventor
Yasuhiro Yoneda
Tateo Kitamura
Toshisuke Kitakoji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP12708678A priority Critical patent/JPS5553423A/en
Publication of JPS5553423A publication Critical patent/JPS5553423A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To obtain resists of excellent resolution characteristics, by heat treating a copolymer of methyl methacrylate and methacrylic and/or acrylic acid at a temperature below the principal chain cutting temperature and then dissolving it in a solvent.
CONSTITUTION: A copolymer of methyl mathacrylate, 90mol%, and methacrylic acid, 10mol%, is given heat treatment in N2 gas at 200°C for 15min. Next, this is dissolved in N, N-dimethylformamide. Further, as an auxiliary agent to avoid coating unevenness, 2-ethosyethylacetate is mixed with it by the same amount of formamide. Resist solution obtained in this way is coated on a semiconductor wafer and is left in N2 gas solution for 24 hours. After this, the substance is sintered preliminarily in N2 gas at 160°C for 50min. The result shows the lowering in the degree of dissolution required for forming a clear pattern. Consequently, the resultant resist has good resolution characteristics and permits easy application.
COPYRIGHT: (C)1980,JPO&Japio
JP12708678A 1978-10-16 1978-10-16 Pattern forming Pending JPS5553423A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12708678A JPS5553423A (en) 1978-10-16 1978-10-16 Pattern forming

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12708678A JPS5553423A (en) 1978-10-16 1978-10-16 Pattern forming

Publications (1)

Publication Number Publication Date
JPS5553423A true JPS5553423A (en) 1980-04-18

Family

ID=14951225

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12708678A Pending JPS5553423A (en) 1978-10-16 1978-10-16 Pattern forming

Country Status (1)

Country Link
JP (1) JPS5553423A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5376826A (en) * 1976-12-20 1978-07-07 Ibm Method of forming regist image

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5376826A (en) * 1976-12-20 1978-07-07 Ibm Method of forming regist image

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