JPS62262043A - ポジ型感光性樹脂組成物 - Google Patents

ポジ型感光性樹脂組成物

Info

Publication number
JPS62262043A
JPS62262043A JP61103745A JP10374586A JPS62262043A JP S62262043 A JPS62262043 A JP S62262043A JP 61103745 A JP61103745 A JP 61103745A JP 10374586 A JP10374586 A JP 10374586A JP S62262043 A JPS62262043 A JP S62262043A
Authority
JP
Japan
Prior art keywords
resin composition
positive
photosensitive resin
positive type
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61103745A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0582935B2 (en, 2012
Inventor
Hiroshi Komano
博司 駒野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Ohka Kogyo Co Ltd
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Priority to JP61103745A priority Critical patent/JPS62262043A/ja
Priority to US07/041,671 priority patent/US4847178A/en
Publication of JPS62262043A publication Critical patent/JPS62262043A/ja
Publication of JPH0582935B2 publication Critical patent/JPH0582935B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/085Photosensitive compositions characterised by adhesion-promoting non-macromolecular additives
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03CPHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C1/00Photosensitive materials
    • G03C1/72Photosensitive compositions not covered by the groups G03C1/005 - G03C1/705
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/0226Quinonediazides characterised by the non-macromolecular additives
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/0073Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces
    • H05K3/0076Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces characterised by the composition of the mask

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Materials For Photolithography (AREA)
JP61103745A 1986-05-08 1986-05-08 ポジ型感光性樹脂組成物 Granted JPS62262043A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP61103745A JPS62262043A (ja) 1986-05-08 1986-05-08 ポジ型感光性樹脂組成物
US07/041,671 US4847178A (en) 1986-05-08 1987-04-30 Positive photosensitive o-quinone diazide composition with benzotriazole carboxylic acid or alkyl ester

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61103745A JPS62262043A (ja) 1986-05-08 1986-05-08 ポジ型感光性樹脂組成物

Publications (2)

Publication Number Publication Date
JPS62262043A true JPS62262043A (ja) 1987-11-14
JPH0582935B2 JPH0582935B2 (en, 2012) 1993-11-24

Family

ID=14362133

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61103745A Granted JPS62262043A (ja) 1986-05-08 1986-05-08 ポジ型感光性樹脂組成物

Country Status (2)

Country Link
US (1) US4847178A (en, 2012)
JP (1) JPS62262043A (en, 2012)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01149809A (ja) * 1987-12-07 1989-06-12 Matsushita Electric Ind Co Ltd ポリアセチレンまたはポリジアセチレンの形成方法
JPH01241546A (ja) * 1988-03-23 1989-09-26 Hitachi Chem Co Ltd 感光性樹脂組成物
JPH07120914A (ja) * 1993-10-21 1995-05-12 Hoechst Japan Ltd ポジ型ホトレジスト組成物
JP2006184660A (ja) * 2004-12-28 2006-07-13 Sumitomo Bakelite Co Ltd ポジ型感光性樹脂組成物並びにそれらを用いた半導体装置及び表示素子
US7132213B2 (en) 2003-07-16 2006-11-07 Tokyo Ohka Kogyo Co., Ltd. Positive photoresist composition and method of forming resist pattern
JP2014178471A (ja) * 2013-03-14 2014-09-25 Asahi Kasei E-Materials Corp 感光性樹脂組成物、硬化レリーフパターンの製造方法、半導体装置及び表示体装置

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8729510D0 (en) * 1987-12-18 1988-02-03 Ucb Sa Photosensitive compositions containing phenolic resins & diazoquinone compounds
US5272026A (en) * 1987-12-18 1993-12-21 Ucb S.A. Negative image process utilizing photosensitive compositions containing aromatic fused polycyclic sulfonic acid and partial ester or phenolic resin with diazoquinone sulfonic acid or diazoquinone carboxylic acid, and associated imaged article
US5753406A (en) * 1988-10-18 1998-05-19 Japan Synthetic Rubber Co., Ltd. Radiation-sensitive resin composition
JP2645587B2 (ja) * 1989-03-29 1997-08-25 富士写真フイルム株式会社 微細パターン形成材料及び微細パターン形成方法
KR950000482B1 (ko) * 1991-04-30 1995-01-20 가부시키가이샤 도시바 패턴형성용 레지스트
JP4068253B2 (ja) * 1999-01-27 2008-03-26 Azエレクトロニックマテリアルズ株式会社 ポジ型感光性樹脂組成物
EP1209527A1 (en) * 2000-11-28 2002-05-29 Shipley Company LLC Photoresist composition
JP3977307B2 (ja) * 2003-09-18 2007-09-19 東京応化工業株式会社 ポジ型フォトレジスト組成物及びレジストパターン形成方法
TW200739265A (en) * 2005-12-06 2007-10-16 Tokyo Ohka Kogyo Co Ltd Positive photoresist composition and method of forming photoresist pattern using the same
CN107422605B (zh) * 2017-08-02 2020-05-05 京东方科技集团股份有限公司 正性光刻胶组合物、过孔的形成方法、显示基板及显示装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3661582A (en) * 1970-03-23 1972-05-09 Western Electric Co Additives to positive photoresists which increase the sensitivity thereof
US3859099A (en) * 1972-12-22 1975-01-07 Eastman Kodak Co Positive plate incorporating diazoquinone
US4036644A (en) * 1973-03-16 1977-07-19 International Business Machines Corporation Photoresist process and photosensitive O-quinone diazide article with aliphatic carboxylic acid as adhesion promotor
US4438190A (en) * 1981-03-04 1984-03-20 Hitachi Chemical Company, Ltd. Photosensitive resin composition containing unsaturated monomers and unsaturated phosphates
US4365019A (en) * 1981-08-06 1982-12-21 Eastman Kodak Company Positive-working resist quinone diazide containing composition and imaging method having improved development rates

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01149809A (ja) * 1987-12-07 1989-06-12 Matsushita Electric Ind Co Ltd ポリアセチレンまたはポリジアセチレンの形成方法
JPH01241546A (ja) * 1988-03-23 1989-09-26 Hitachi Chem Co Ltd 感光性樹脂組成物
JPH07120914A (ja) * 1993-10-21 1995-05-12 Hoechst Japan Ltd ポジ型ホトレジスト組成物
US7132213B2 (en) 2003-07-16 2006-11-07 Tokyo Ohka Kogyo Co., Ltd. Positive photoresist composition and method of forming resist pattern
JP2006184660A (ja) * 2004-12-28 2006-07-13 Sumitomo Bakelite Co Ltd ポジ型感光性樹脂組成物並びにそれらを用いた半導体装置及び表示素子
JP2014178471A (ja) * 2013-03-14 2014-09-25 Asahi Kasei E-Materials Corp 感光性樹脂組成物、硬化レリーフパターンの製造方法、半導体装置及び表示体装置

Also Published As

Publication number Publication date
US4847178A (en) 1989-07-11
JPH0582935B2 (en, 2012) 1993-11-24

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Legal Events

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EXPY Cancellation because of completion of term