JPS6226181B2 - - Google Patents

Info

Publication number
JPS6226181B2
JPS6226181B2 JP56008947A JP894781A JPS6226181B2 JP S6226181 B2 JPS6226181 B2 JP S6226181B2 JP 56008947 A JP56008947 A JP 56008947A JP 894781 A JP894781 A JP 894781A JP S6226181 B2 JPS6226181 B2 JP S6226181B2
Authority
JP
Japan
Prior art keywords
region
silicon oxide
island
oxide film
isolation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56008947A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57124451A (en
Inventor
Taiji Usui
Tetsuya Takayashiki
Kotaro Kato
Tetsutada Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Oki Electric Industry Co Ltd
Original Assignee
Nippon Telegraph and Telephone Corp
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp, Oki Electric Industry Co Ltd filed Critical Nippon Telegraph and Telephone Corp
Priority to JP56008947A priority Critical patent/JPS57124451A/ja
Publication of JPS57124451A publication Critical patent/JPS57124451A/ja
Publication of JPS6226181B2 publication Critical patent/JPS6226181B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
JP56008947A 1981-01-26 1981-01-26 Semiconductor ic device Granted JPS57124451A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56008947A JPS57124451A (en) 1981-01-26 1981-01-26 Semiconductor ic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56008947A JPS57124451A (en) 1981-01-26 1981-01-26 Semiconductor ic device

Publications (2)

Publication Number Publication Date
JPS57124451A JPS57124451A (en) 1982-08-03
JPS6226181B2 true JPS6226181B2 (enrdf_load_stackoverflow) 1987-06-08

Family

ID=11706858

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56008947A Granted JPS57124451A (en) 1981-01-26 1981-01-26 Semiconductor ic device

Country Status (1)

Country Link
JP (1) JPS57124451A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0748516B2 (ja) * 1986-09-26 1995-05-24 アメリカン テレフォン アンド テレグラフ カムパニー 埋没導電層を有する誘電的に分離されたデバイスの製造方法
JP3124085B2 (ja) * 1991-12-02 2001-01-15 沖電気工業株式会社 半導体装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5075780A (enrdf_load_stackoverflow) * 1973-11-07 1975-06-21

Also Published As

Publication number Publication date
JPS57124451A (en) 1982-08-03

Similar Documents

Publication Publication Date Title
JPS63314844A (ja) 半導体装置の製造方法
US5621239A (en) SOI device having a buried layer of reduced resistivity
JPS62229856A (ja) シリコン島状部の埋設壁分離
JPH0344419B2 (enrdf_load_stackoverflow)
JP2737808B2 (ja) Soiウエハ上の下地絶縁体層の上のシリコン・デバイス層にシリコンの複数の薄いデバイス・メサを形成する方法
US4985745A (en) Substrate structure for composite semiconductor device
JPH04106932A (ja) バイポーラトランジスタの製造方法
US3979237A (en) Device isolation in integrated circuits
JPH02285642A (ja) 誘電体分離半導体デバイス及びその製造方法
JPS6226181B2 (enrdf_load_stackoverflow)
JPS61172346A (ja) 半導体集積回路装置
JPS59186341A (ja) 相補形誘電体分離基板の製造方法
JP3146582B2 (ja) Soi構造の縦型バイポーラトランジスタとその製造方法
JPH02260442A (ja) 誘電体分離型半導体基板
JPS6244853B2 (enrdf_load_stackoverflow)
JPS62130537A (ja) 集積回路の素子間分離方法
JP3157595B2 (ja) 誘電体分離基板
KR940010920B1 (ko) Soi 구조의 반도체 장치 제조 방법
JPS6226837A (ja) 半導体装置の製造方法
JPS5840337B2 (ja) 半導体集積回路の製造方法
JPH01144648A (ja) 半導体装置
JPS59186340A (ja) 相補形誘電体分離基板の製造方法
JPH0421343B2 (enrdf_load_stackoverflow)
JPS62124753A (ja) 絶縁層分離基板の製法
JPH01238033A (ja) 誘電体分離型半導体基板及びその製造方法