JPS57124451A - Semiconductor ic device - Google Patents

Semiconductor ic device

Info

Publication number
JPS57124451A
JPS57124451A JP894781A JP894781A JPS57124451A JP S57124451 A JPS57124451 A JP S57124451A JP 894781 A JP894781 A JP 894781A JP 894781 A JP894781 A JP 894781A JP S57124451 A JPS57124451 A JP S57124451A
Authority
JP
Japan
Prior art keywords
region
isolating
compensation
caused
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP894781A
Other languages
Japanese (ja)
Other versions
JPS6226181B2 (en
Inventor
Taiji Usui
Tetsuya Takayashiki
Kotaro Kato
Tetsutada Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Oki Electric Industry Co Ltd
Original Assignee
Nippon Telegraph and Telephone Corp
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp, Oki Electric Industry Co Ltd filed Critical Nippon Telegraph and Telephone Corp
Priority to JP894781A priority Critical patent/JPS57124451A/en
Publication of JPS57124451A publication Critical patent/JPS57124451A/en
Publication of JPS6226181B2 publication Critical patent/JPS6226181B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers

Abstract

PURPOSE:To eliminate wiring disconnection in the neighborhood of an SiO2 isolating region in the event of a reduced region area caused by excessive abrasion by a method wherein a part of the collector compensation diffused region is caused not to overlap the isolating region. CONSTITUTION:A part of a collector compensation diffused region 29 is caused to sufficiently extend inward beyond an isolating region 24 and is shaped into a laid down U shape, when a master pattern is used for the purpose of keeping the part extending inward of the U shape may not overlap the region 24. In this setup, island region area reduced thanks to excessive abrasion during the photolithographic process prior to compensation diffusion does not cause a dent etched in the isolating region during the process of forming an electrode outlet in the part occupying the part beyond the inside brim of the isolating region. Accordingly, by leading a collector electrode wiring layer out of the collector compensation region into the area outside the island region, disconnections in the wiring layer and the like can be eliminated.
JP894781A 1981-01-26 1981-01-26 Semiconductor ic device Granted JPS57124451A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP894781A JPS57124451A (en) 1981-01-26 1981-01-26 Semiconductor ic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP894781A JPS57124451A (en) 1981-01-26 1981-01-26 Semiconductor ic device

Publications (2)

Publication Number Publication Date
JPS57124451A true JPS57124451A (en) 1982-08-03
JPS6226181B2 JPS6226181B2 (en) 1987-06-08

Family

ID=11706858

Family Applications (1)

Application Number Title Priority Date Filing Date
JP894781A Granted JPS57124451A (en) 1981-01-26 1981-01-26 Semiconductor ic device

Country Status (1)

Country Link
JP (1) JPS57124451A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6388839A (en) * 1986-09-26 1988-04-19 エイ・ティ・アンド・ティ・コーポレーション Manufacture of dielectrically isolated device with buried conductive layer
US5387817A (en) * 1991-12-02 1995-02-07 Oki Electric Industry Co., Ltd. Dielectric isolation substrate having single-crystal silicon islands surrounded by groove and lower conductive layer filling the groove therewith

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5075780A (en) * 1973-11-07 1975-06-21

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5075780A (en) * 1973-11-07 1975-06-21

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6388839A (en) * 1986-09-26 1988-04-19 エイ・ティ・アンド・ティ・コーポレーション Manufacture of dielectrically isolated device with buried conductive layer
US5387817A (en) * 1991-12-02 1995-02-07 Oki Electric Industry Co., Ltd. Dielectric isolation substrate having single-crystal silicon islands surrounded by groove and lower conductive layer filling the groove therewith

Also Published As

Publication number Publication date
JPS6226181B2 (en) 1987-06-08

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