JPS57184237A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57184237A
JPS57184237A JP6860582A JP6860582A JPS57184237A JP S57184237 A JPS57184237 A JP S57184237A JP 6860582 A JP6860582 A JP 6860582A JP 6860582 A JP6860582 A JP 6860582A JP S57184237 A JPS57184237 A JP S57184237A
Authority
JP
Japan
Prior art keywords
wiring
contact hole
aluminum
slit
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6860582A
Other languages
Japanese (ja)
Other versions
JPS5833704B2 (en
Inventor
Shigeharu Horiuchi
Yukio Tanuma
Hiroshi Iwai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP6860582A priority Critical patent/JPS5833704B2/en
Publication of JPS57184237A publication Critical patent/JPS57184237A/en
Publication of JPS5833704B2 publication Critical patent/JPS5833704B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To prevent the accident of disconnection of wiring, and to obtain the wiring having high reliability and high yield by forming a contact hole connected to a metallic wiring layer, along the wiring longitudinal direction thereof a slit is shaped. CONSTITUTION:The aluminum wiring wider than 10mu width is formed within 30mu from the contact hole. When there is no silicon supply source which can sufficiently supply silicon to aluminum wiring in the vicinity of the contact hole, aluminum wiring 15' is connected to aluminum wiring 16' and a source region 8' through the contact hole 11', and the slit 17' is formed to the aluminum wiring 16'. Accordingly, the so-called punch-through can be prevented because the diffusion of silicon to the circumferential aluminum layer is inhibited by the slit.
JP6860582A 1982-04-26 1982-04-26 semiconductor equipment Expired JPS5833704B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6860582A JPS5833704B2 (en) 1982-04-26 1982-04-26 semiconductor equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6860582A JPS5833704B2 (en) 1982-04-26 1982-04-26 semiconductor equipment

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP50086148A Division JPS5933979B2 (en) 1975-07-16 1975-07-16 semiconductor equipment

Publications (2)

Publication Number Publication Date
JPS57184237A true JPS57184237A (en) 1982-11-12
JPS5833704B2 JPS5833704B2 (en) 1983-07-21

Family

ID=13378570

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6860582A Expired JPS5833704B2 (en) 1982-04-26 1982-04-26 semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS5833704B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018026451A (en) * 2016-08-10 2018-02-15 エスアイアイ・セミコンダクタ株式会社 Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018026451A (en) * 2016-08-10 2018-02-15 エスアイアイ・セミコンダクタ株式会社 Semiconductor device

Also Published As

Publication number Publication date
JPS5833704B2 (en) 1983-07-21

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