JPS6225451A - 相補型半導体装置の製造方法 - Google Patents

相補型半導体装置の製造方法

Info

Publication number
JPS6225451A
JPS6225451A JP60164612A JP16461285A JPS6225451A JP S6225451 A JPS6225451 A JP S6225451A JP 60164612 A JP60164612 A JP 60164612A JP 16461285 A JP16461285 A JP 16461285A JP S6225451 A JPS6225451 A JP S6225451A
Authority
JP
Japan
Prior art keywords
film
type
substrate
contact hole
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60164612A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0248146B2 (cs
Inventor
Masaki Sato
正毅 佐藤
Kazuyoshi Shinada
品田　一義
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP60164612A priority Critical patent/JPS6225451A/ja
Priority to US06/813,142 priority patent/US4743564A/en
Publication of JPS6225451A publication Critical patent/JPS6225451A/ja
Publication of JPH0248146B2 publication Critical patent/JPH0248146B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
JP60164612A 1984-12-28 1985-07-25 相補型半導体装置の製造方法 Granted JPS6225451A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP60164612A JPS6225451A (ja) 1985-07-25 1985-07-25 相補型半導体装置の製造方法
US06/813,142 US4743564A (en) 1984-12-28 1985-12-24 Method for manufacturing a complementary MOS type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60164612A JPS6225451A (ja) 1985-07-25 1985-07-25 相補型半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6225451A true JPS6225451A (ja) 1987-02-03
JPH0248146B2 JPH0248146B2 (cs) 1990-10-24

Family

ID=15796496

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60164612A Granted JPS6225451A (ja) 1984-12-28 1985-07-25 相補型半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6225451A (cs)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02170555A (ja) * 1988-10-28 1990-07-02 American Teleph & Telegr Co <Att> 集積回路およびシリサイド構造を形成するための低温法を含むその製造方法
US6524904B1 (en) 1999-04-20 2003-02-25 Matsushita Electric Industrial Co., Ltd. Method of fabricating semiconductor device
JP2004519092A (ja) * 2000-10-30 2004-06-24 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド ソース側にホウ素を注入した不揮発性メモリ

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02170555A (ja) * 1988-10-28 1990-07-02 American Teleph & Telegr Co <Att> 集積回路およびシリサイド構造を形成するための低温法を含むその製造方法
US6524904B1 (en) 1999-04-20 2003-02-25 Matsushita Electric Industrial Co., Ltd. Method of fabricating semiconductor device
JP2004519092A (ja) * 2000-10-30 2004-06-24 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド ソース側にホウ素を注入した不揮発性メモリ

Also Published As

Publication number Publication date
JPH0248146B2 (cs) 1990-10-24

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Legal Events

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