JPS62254434A - ＳｉＯ↓２／ＳｉＮ／ＳｉＯ↓２膜の成膜方法 - Google Patents
ＳｉＯ↓２／ＳｉＮ／ＳｉＯ↓２膜の成膜方法Info
- Publication number
- JPS62254434A JPS62254434A JP9900686A JP9900686A JPS62254434A JP S62254434 A JPS62254434 A JP S62254434A JP 9900686 A JP9900686 A JP 9900686A JP 9900686 A JP9900686 A JP 9900686A JP S62254434 A JPS62254434 A JP S62254434A
- Authority
- JP
- Japan
- Prior art keywords
- film
- sin
- sio2
- sin film
- sio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015572 biosynthetic process Effects 0.000 title claims 2
- 238000000034 method Methods 0.000 claims abstract description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 11
- 239000001301 oxygen Substances 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 238000000137 annealing Methods 0.000 claims abstract description 9
- 239000012299 nitrogen atmosphere Substances 0.000 claims abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 5
- 239000010703 silicon Substances 0.000 claims abstract description 5
- 230000035699 permeability Effects 0.000 claims abstract 2
- 230000003647 oxidation Effects 0.000 claims description 15
- 238000007254 oxidation reaction Methods 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 24
- 229910052681 coesite Inorganic materials 0.000 abstract description 12
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 12
- 239000000377 silicon dioxide Substances 0.000 abstract description 12
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 12
- 229910052682 stishovite Inorganic materials 0.000 abstract description 12
- 229910052905 tridymite Inorganic materials 0.000 abstract description 12
- 239000012298 atmosphere Substances 0.000 abstract description 5
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 71
- 239000010410 layer Substances 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910020489 SiO3 Inorganic materials 0.000 description 3
- 238000000572 ellipsometry Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- KZNMRPQBBZBTSW-UHFFFAOYSA-N [Au]=O Chemical compound [Au]=O KZNMRPQBBZBTSW-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9900686A JPS62254434A (ja) | 1986-04-28 | 1986-04-28 | ＳｉＯ↓２／ＳｉＮ／ＳｉＯ↓２膜の成膜方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9900686A JPS62254434A (ja) | 1986-04-28 | 1986-04-28 | ＳｉＯ↓２／ＳｉＮ／ＳｉＯ↓２膜の成膜方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62254434A true JPS62254434A (ja) | 1987-11-06 |
| JPH0455526B2 JPH0455526B2 (enrdf_load_stackoverflow) | 1992-09-03 |
Family
ID=14234949
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9900686A Granted JPS62254434A (ja) | 1986-04-28 | 1986-04-28 | ＳｉＯ↓２／ＳｉＮ／ＳｉＯ↓２膜の成膜方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62254434A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01145821A (ja) * | 1987-12-01 | 1989-06-07 | Nec Corp | 半導体集積回路の製造方法 |
| JP2004523134A (ja) * | 2000-09-19 | 2004-07-29 | マットソン テクノロジイ インコーポレイテッド | 誘電体膜の形成方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4998182A (enrdf_load_stackoverflow) * | 1973-01-19 | 1974-09-17 | ||
| JPS60121724A (ja) * | 1983-12-06 | 1985-06-29 | Nec Kyushu Ltd | 半導体装置の製造方法 |
-
1986
- 1986-04-28 JP JP9900686A patent/JPS62254434A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4998182A (enrdf_load_stackoverflow) * | 1973-01-19 | 1974-09-17 | ||
| JPS60121724A (ja) * | 1983-12-06 | 1985-06-29 | Nec Kyushu Ltd | 半導体装置の製造方法 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01145821A (ja) * | 1987-12-01 | 1989-06-07 | Nec Corp | 半導体集積回路の製造方法 |
| JP2004523134A (ja) * | 2000-09-19 | 2004-07-29 | マットソン テクノロジイ インコーポレイテッド | 誘電体膜の形成方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0455526B2 (enrdf_load_stackoverflow) | 1992-09-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |