JPS6223474B2 - - Google Patents
Info
- Publication number
- JPS6223474B2 JPS6223474B2 JP16603078A JP16603078A JPS6223474B2 JP S6223474 B2 JPS6223474 B2 JP S6223474B2 JP 16603078 A JP16603078 A JP 16603078A JP 16603078 A JP16603078 A JP 16603078A JP S6223474 B2 JPS6223474 B2 JP S6223474B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- gate
- pier
- semiconductor substrate
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 claims 1
- 108091006146 Channels Proteins 0.000 description 12
- 239000012535 impurity Substances 0.000 description 3
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 2
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16603078A JPS5591880A (en) | 1978-12-29 | 1978-12-29 | Junction type field-effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16603078A JPS5591880A (en) | 1978-12-29 | 1978-12-29 | Junction type field-effect transistor |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59061953A Division JPS59193072A (ja) | 1984-03-28 | 1984-03-28 | 接合型電界効果トランジスタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5591880A JPS5591880A (en) | 1980-07-11 |
| JPS6223474B2 true JPS6223474B2 (en, 2012) | 1987-05-22 |
Family
ID=15823634
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16603078A Granted JPS5591880A (en) | 1978-12-29 | 1978-12-29 | Junction type field-effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5591880A (en, 2012) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01171064U (en, 2012) * | 1988-05-23 | 1989-12-04 |
-
1978
- 1978-12-29 JP JP16603078A patent/JPS5591880A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01171064U (en, 2012) * | 1988-05-23 | 1989-12-04 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5591880A (en) | 1980-07-11 |
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