JPS5591880A - Junction type field-effect transistor - Google Patents

Junction type field-effect transistor

Info

Publication number
JPS5591880A
JPS5591880A JP16603078A JP16603078A JPS5591880A JP S5591880 A JPS5591880 A JP S5591880A JP 16603078 A JP16603078 A JP 16603078A JP 16603078 A JP16603078 A JP 16603078A JP S5591880 A JPS5591880 A JP S5591880A
Authority
JP
Japan
Prior art keywords
region
bridge pier
gate region
gate
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16603078A
Other languages
Japanese (ja)
Other versions
JPS6223474B2 (en
Inventor
Tadahiko Tanaka
Takeshi Omukae
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Original Assignee
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Sanyo Electric Co Ltd, Sanyo Electric Co Ltd filed Critical Tokyo Sanyo Electric Co Ltd
Priority to JP16603078A priority Critical patent/JPS5591880A/en
Publication of JPS5591880A publication Critical patent/JPS5591880A/en
Publication of JPS6223474B2 publication Critical patent/JPS6223474B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To increase mutual conductance by providing a plurality of bridge pier regions and thereby making the entire gate region operate effectively.
CONSTITUTION: Bridge pier region 18 connects gate region 13 and semiconductor substrate 11 below channel region 12, and a route is formed for transmitting the voltage impressed on gate electrode 13 directly to gate region 13 via semiconductor substrate 11 and bridge pier region 18. Since voltage is impressed on gate region 13 from the region surrounding channel 12 diffused over semiconductor substrate 11 and also from bridge pier region 18, the voltage drop of gate region 13 in the lateral direction can be almost neglected, so that gate region 13 as a whole can operate efficiently.
COPYRIGHT: (C)1980,JPO&Japio
JP16603078A 1978-12-29 1978-12-29 Junction type field-effect transistor Granted JPS5591880A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16603078A JPS5591880A (en) 1978-12-29 1978-12-29 Junction type field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16603078A JPS5591880A (en) 1978-12-29 1978-12-29 Junction type field-effect transistor

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP6195384A Division JPS59193072A (en) 1984-03-28 1984-03-28 Junction type field effect transistor

Publications (2)

Publication Number Publication Date
JPS5591880A true JPS5591880A (en) 1980-07-11
JPS6223474B2 JPS6223474B2 (en) 1987-05-22

Family

ID=15823634

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16603078A Granted JPS5591880A (en) 1978-12-29 1978-12-29 Junction type field-effect transistor

Country Status (1)

Country Link
JP (1) JPS5591880A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01171064U (en) * 1988-05-23 1989-12-04

Also Published As

Publication number Publication date
JPS6223474B2 (en) 1987-05-22

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