JPS62226668A - 薄膜トランジスタ - Google Patents

薄膜トランジスタ

Info

Publication number
JPS62226668A
JPS62226668A JP61070224A JP7022486A JPS62226668A JP S62226668 A JPS62226668 A JP S62226668A JP 61070224 A JP61070224 A JP 61070224A JP 7022486 A JP7022486 A JP 7022486A JP S62226668 A JPS62226668 A JP S62226668A
Authority
JP
Japan
Prior art keywords
insulating film
source
film
gate
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61070224A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0563026B2 (enExample
Inventor
Mitsuhiro Koudono
充浩 向殿
Hiroaki Kato
博章 加藤
Kohei Kishi
岸　幸平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP61070224A priority Critical patent/JPS62226668A/ja
Priority to DE19863640174 priority patent/DE3640174A1/de
Priority to GB8628172A priority patent/GB2185622B/en
Publication of JPS62226668A publication Critical patent/JPS62226668A/ja
Priority to US07/267,680 priority patent/US4935792A/en
Publication of JPH0563026B2 publication Critical patent/JPH0563026B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/4825—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) for devices consisting of semiconductor layers on insulating or semi-insulating substrates, e.g. silicon on sapphire devices, i.e. SOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
JP61070224A 1985-11-27 1986-03-27 薄膜トランジスタ Granted JPS62226668A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP61070224A JPS62226668A (ja) 1986-03-27 1986-03-27 薄膜トランジスタ
DE19863640174 DE3640174A1 (de) 1985-11-27 1986-11-25 Duennfilm-transistor-anordnung
GB8628172A GB2185622B (en) 1985-11-27 1986-11-25 Thin film transistor array
US07/267,680 US4935792A (en) 1985-11-27 1988-11-01 Thin film transistor array

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61070224A JPS62226668A (ja) 1986-03-27 1986-03-27 薄膜トランジスタ

Publications (2)

Publication Number Publication Date
JPS62226668A true JPS62226668A (ja) 1987-10-05
JPH0563026B2 JPH0563026B2 (enExample) 1993-09-09

Family

ID=13425363

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61070224A Granted JPS62226668A (ja) 1985-11-27 1986-03-27 薄膜トランジスタ

Country Status (1)

Country Link
JP (1) JPS62226668A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3714164A1 (de) * 1986-04-30 1987-11-05 Sharp Kk Fluessigkristallanzeige
JPH01123475A (ja) * 1987-11-06 1989-05-16 Sharp Corp 液晶表示装置
JPH02150060A (ja) * 1988-11-30 1990-06-08 Fuji Xerox Co Ltd 薄膜トランジスタ
EP0681325A3 (en) * 1994-04-28 1997-04-23 Xerox Corp Structure of thin layers with insulation and planarization layer between crossing lines.
EP0813251A3 (en) * 1993-04-23 1998-01-14 Kabushiki Kaisha Toshiba Thin-film transistor and display device using the same
CN1333286C (zh) * 2003-11-10 2007-08-22 友达光电股份有限公司 防止电极线断线的平面显示器

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3714164A1 (de) * 1986-04-30 1987-11-05 Sharp Kk Fluessigkristallanzeige
JPH01123475A (ja) * 1987-11-06 1989-05-16 Sharp Corp 液晶表示装置
JPH02150060A (ja) * 1988-11-30 1990-06-08 Fuji Xerox Co Ltd 薄膜トランジスタ
EP0813251A3 (en) * 1993-04-23 1998-01-14 Kabushiki Kaisha Toshiba Thin-film transistor and display device using the same
EP0681325A3 (en) * 1994-04-28 1997-04-23 Xerox Corp Structure of thin layers with insulation and planarization layer between crossing lines.
CN1333286C (zh) * 2003-11-10 2007-08-22 友达光电股份有限公司 防止电极线断线的平面显示器

Also Published As

Publication number Publication date
JPH0563026B2 (enExample) 1993-09-09

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