JPS62221167A - 多層型薄膜太陽電池 - Google Patents
多層型薄膜太陽電池Info
- Publication number
- JPS62221167A JPS62221167A JP61065341A JP6534186A JPS62221167A JP S62221167 A JPS62221167 A JP S62221167A JP 61065341 A JP61065341 A JP 61065341A JP 6534186 A JP6534186 A JP 6534186A JP S62221167 A JPS62221167 A JP S62221167A
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric conversion
- substrate
- conversion layer
- substrate side
- element groups
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims description 12
- 238000006243 chemical reaction Methods 0.000 claims abstract description 72
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 230000003287 optical effect Effects 0.000 claims abstract description 6
- 239000004065 semiconductor Substances 0.000 claims abstract description 5
- 230000007423 decrease Effects 0.000 claims description 2
- 239000011159 matrix material Substances 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 4
- 230000003467 diminishing effect Effects 0.000 abstract 2
- 238000010030 laminating Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 10
- 239000010408 film Substances 0.000 description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 238000001228 spectrum Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- 206010034960 Photophobia Diseases 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 229920005570 flexible polymer Polymers 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61065341A JPS62221167A (ja) | 1986-03-24 | 1986-03-24 | 多層型薄膜太陽電池 |
DE19873709153 DE3709153A1 (de) | 1986-03-24 | 1987-03-20 | Mehrlagige duennfilmsolarzelle |
US06/029,682 US4784701A (en) | 1986-03-24 | 1987-03-24 | Multi-layered thin film solar cell |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61065341A JPS62221167A (ja) | 1986-03-24 | 1986-03-24 | 多層型薄膜太陽電池 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS62221167A true JPS62221167A (ja) | 1987-09-29 |
JPH0577308B2 JPH0577308B2 (US20100056889A1-20100304-C00004.png) | 1993-10-26 |
Family
ID=13284145
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61065341A Granted JPS62221167A (ja) | 1986-03-24 | 1986-03-24 | 多層型薄膜太陽電池 |
Country Status (3)
Country | Link |
---|---|
US (1) | US4784701A (US20100056889A1-20100304-C00004.png) |
JP (1) | JPS62221167A (US20100056889A1-20100304-C00004.png) |
DE (1) | DE3709153A1 (US20100056889A1-20100304-C00004.png) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009529236A (ja) * | 2006-04-12 | 2009-08-13 | エルジー エレクトロニクス インコーポレイティド | 薄膜型太陽電池及びその製造方法 |
WO2010107033A1 (ja) * | 2009-03-18 | 2010-09-23 | 三菱電機株式会社 | 光電変換装置およびその製造方法 |
WO2014050645A1 (ja) * | 2012-09-25 | 2014-04-03 | シャープ株式会社 | 太陽電池モジュールおよび太陽光発電装置 |
WO2014148033A1 (en) * | 2013-03-22 | 2014-09-25 | Sharp Kabushiki Kaisha | SOLID STATE DYE-SENSITIZED SOLAR CELL (ssDSC) TANDEM MODULE AND METHOD FOR FORMING ssDSC TANDEM MODULE |
JP2015097286A (ja) * | 2009-06-05 | 2015-05-21 | 株式会社半導体エネルギー研究所 | 光電変換装置 |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4948436A (en) * | 1988-02-05 | 1990-08-14 | Siemens Aktiengesellschaft | Thin-film solar cell arrangement |
CA2024662A1 (en) * | 1989-09-08 | 1991-03-09 | Robert Oswald | Monolithic series and parallel connected photovoltaic module |
JPH03181180A (ja) * | 1989-12-11 | 1991-08-07 | Canon Inc | 太陽電池およびその製造方法 |
US5527716A (en) * | 1992-02-04 | 1996-06-18 | Siemens Aktiengesellschaft | Method of making integrated-circuit stacked-cell solar module |
DE4208710A1 (de) * | 1992-03-18 | 1993-09-30 | Flachglas Solartechnik Gmbh | Bauelement mit Solarzellen |
US6548751B2 (en) * | 2000-12-12 | 2003-04-15 | Solarflex Technologies, Inc. | Thin film flexible solar cell |
US8314327B2 (en) * | 2005-11-06 | 2012-11-20 | Banpil Photonics, Inc. | Photovoltaic cells based on nano or micro-scale structures |
US20080302418A1 (en) * | 2006-03-18 | 2008-12-11 | Benyamin Buller | Elongated Photovoltaic Devices in Casings |
US20080047599A1 (en) * | 2006-03-18 | 2008-02-28 | Benyamin Buller | Monolithic integration of nonplanar solar cells |
US20100326429A1 (en) * | 2006-05-19 | 2010-12-30 | Cumpston Brian H | Hermetically sealed cylindrical solar cells |
US7235736B1 (en) | 2006-03-18 | 2007-06-26 | Solyndra, Inc. | Monolithic integration of cylindrical solar cells |
US20100132765A1 (en) * | 2006-05-19 | 2010-06-03 | Cumpston Brian H | Hermetically sealed solar cells |
CN101569018B (zh) * | 2006-10-06 | 2013-06-12 | 索林塔有限公司 | 密封光伏设备 |
US20080083449A1 (en) * | 2006-10-06 | 2008-04-10 | Solyndra, Inc., A Delaware Corporation | Sealed photovoltaic apparatus |
US7982127B2 (en) | 2006-12-29 | 2011-07-19 | Industrial Technology Research Institute | Thin film solar cell module of see-through type |
KR20080079058A (ko) * | 2007-02-26 | 2008-08-29 | 엘지전자 주식회사 | 박막형 태양전지 모듈과 그의 제조방법 |
JP4966848B2 (ja) * | 2007-12-27 | 2012-07-04 | 三洋電機株式会社 | 太陽電池モジュール及び太陽電池モジュールの製造方法 |
EP2311101B1 (en) * | 2008-07-03 | 2012-11-21 | Imec | Photovoltaic module and the processing thereof |
US9379265B2 (en) | 2008-09-29 | 2016-06-28 | Sol Chip Ltd. | Integrated circuit combination of a target integrated circuit, photovoltaic cells and light sensitive diodes connected to enable a self-sufficient light detector device |
US8952473B2 (en) | 2008-09-29 | 2015-02-10 | Sol Chip Ltd. | Integrated circuit combination of a target integrated circuit and a plurality of cells connected thereto using the top conductive layer |
US8921967B2 (en) | 2008-09-29 | 2014-12-30 | Sol Chip Ltd. | Integrated circuit combination of a target integrated circuit and a plurality of photovoltaic cells connected thereto using the top conductive layer |
US8835748B2 (en) * | 2009-01-06 | 2014-09-16 | Sunlight Photonics Inc. | Multi-junction PV module |
DE102009007908A1 (de) | 2009-02-06 | 2010-08-12 | Zylum Beteiligungsgesellschaft Mbh & Co. Patente Ii Kg | Verfahren zur Herstellung eines Dünnschicht-Photovoltaik-Systems und Dünnschicht-Photovoltaik-System |
IT1392995B1 (it) * | 2009-02-12 | 2012-04-02 | St Microelectronics Srl | Pannello solare con due moduli fotovoltaici multicellulari monolitici di diversa tecnologia |
EP2405485B1 (en) * | 2009-03-02 | 2020-06-10 | Kaneka Corporation | Thin film solar cell module |
WO2010142575A2 (en) * | 2009-06-11 | 2010-12-16 | Oerlikon Solar Ag, Trübbach | Tandem solar cell integrated in a double insulating glass window for building integrated photovoltaic applications |
FR2948498B1 (fr) * | 2009-07-23 | 2012-06-15 | Solsia | Panneau solaire photovoltaique a diodes en couches minces |
KR101291277B1 (ko) * | 2010-11-04 | 2013-07-30 | 엘지전자 주식회사 | 박막형 태양전지 모듈 및 그 제조방법 |
EP2461362A1 (fr) * | 2010-12-06 | 2012-06-06 | Solsia | Panneau solaire photovoltaïque à diodes en couches minces |
TWI451580B (zh) * | 2011-09-26 | 2014-09-01 | Ind Tech Res Inst | 薄膜太陽能電池之製法 |
US9147794B2 (en) * | 2011-11-30 | 2015-09-29 | First Solar, Inc. | Three terminal thin film photovoltaic module and their methods of manufacture |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4316049A (en) * | 1979-08-28 | 1982-02-16 | Rca Corporation | High voltage series connected tandem junction solar battery |
JPS5927588B2 (ja) * | 1980-05-15 | 1984-07-06 | 松下電工株式会社 | 電気かみそりのスイツチ構造 |
US4295002A (en) * | 1980-06-23 | 1981-10-13 | International Business Machines Corporation | Heterojunction V-groove multijunction solar cell |
JPS6175567A (ja) * | 1984-09-20 | 1986-04-17 | Sanyo Electric Co Ltd | 光起電力装置 |
JPH0630163A (ja) * | 1992-06-24 | 1994-02-04 | Murata Mach Ltd | ファクシミリ装置 |
-
1986
- 1986-03-24 JP JP61065341A patent/JPS62221167A/ja active Granted
-
1987
- 1987-03-20 DE DE19873709153 patent/DE3709153A1/de active Granted
- 1987-03-24 US US06/029,682 patent/US4784701A/en not_active Expired - Fee Related
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009529236A (ja) * | 2006-04-12 | 2009-08-13 | エルジー エレクトロニクス インコーポレイティド | 薄膜型太陽電池及びその製造方法 |
WO2010107033A1 (ja) * | 2009-03-18 | 2010-09-23 | 三菱電機株式会社 | 光電変換装置およびその製造方法 |
JP5518045B2 (ja) * | 2009-03-18 | 2014-06-11 | 三菱電機株式会社 | 光電変換装置およびその製造方法 |
US8766085B2 (en) | 2009-03-18 | 2014-07-01 | Mitsubishi Electric Corporation | Photoelectric conversion device and method of manufacturing the same |
JP2015097286A (ja) * | 2009-06-05 | 2015-05-21 | 株式会社半導体エネルギー研究所 | 光電変換装置 |
WO2014050645A1 (ja) * | 2012-09-25 | 2014-04-03 | シャープ株式会社 | 太陽電池モジュールおよび太陽光発電装置 |
JPWO2014050645A1 (ja) * | 2012-09-25 | 2016-08-22 | シャープ株式会社 | 太陽電池モジュールおよび太陽光発電装置 |
WO2014148033A1 (en) * | 2013-03-22 | 2014-09-25 | Sharp Kabushiki Kaisha | SOLID STATE DYE-SENSITIZED SOLAR CELL (ssDSC) TANDEM MODULE AND METHOD FOR FORMING ssDSC TANDEM MODULE |
Also Published As
Publication number | Publication date |
---|---|
DE3709153A1 (de) | 1987-10-15 |
DE3709153C2 (US20100056889A1-20100304-C00004.png) | 1989-11-09 |
US4784701A (en) | 1988-11-15 |
JPH0577308B2 (US20100056889A1-20100304-C00004.png) | 1993-10-26 |
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