JPS62214660A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS62214660A
JPS62214660A JP61056984A JP5698486A JPS62214660A JP S62214660 A JPS62214660 A JP S62214660A JP 61056984 A JP61056984 A JP 61056984A JP 5698486 A JP5698486 A JP 5698486A JP S62214660 A JPS62214660 A JP S62214660A
Authority
JP
Japan
Prior art keywords
transistor
base
stage
semiconductor device
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61056984A
Other languages
English (en)
Japanese (ja)
Other versions
JPH047097B2 (enExample
Inventor
Keizo Tani
谷　敬造
Eiji Kotani
英治 小谷
Junichi Nakao
中尾　淳一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP61056984A priority Critical patent/JPS62214660A/ja
Priority to US07/013,793 priority patent/US4769560A/en
Priority to DE8787103476T priority patent/DE3779153D1/de
Priority to EP87103476A priority patent/EP0237933B1/en
Publication of JPS62214660A publication Critical patent/JPS62214660A/ja
Publication of JPH047097B2 publication Critical patent/JPH047097B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—DC amplifiers in which all stages are DC-coupled
    • H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/3432—DC amplifiers in which all stages are DC-coupled with semiconductor devices only with bipolar transistors
    • H03F3/3435—DC amplifiers in which all stages are DC-coupled with semiconductor devices only with bipolar transistors using Darlington amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
JP61056984A 1986-03-17 1986-03-17 半導体装置 Granted JPS62214660A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP61056984A JPS62214660A (ja) 1986-03-17 1986-03-17 半導体装置
US07/013,793 US4769560A (en) 1986-03-17 1987-02-12 Semiconductor device having darlington-connected transistor circuit
DE8787103476T DE3779153D1 (de) 1986-03-17 1987-03-11 Halbleitervorrichtung mit einer darlington-transistorschaltung.
EP87103476A EP0237933B1 (en) 1986-03-17 1987-03-11 Semiconductor device having darlington-connected transistor circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61056984A JPS62214660A (ja) 1986-03-17 1986-03-17 半導体装置

Publications (2)

Publication Number Publication Date
JPS62214660A true JPS62214660A (ja) 1987-09-21
JPH047097B2 JPH047097B2 (enExample) 1992-02-07

Family

ID=13042763

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61056984A Granted JPS62214660A (ja) 1986-03-17 1986-03-17 半導体装置

Country Status (4)

Country Link
US (1) US4769560A (enExample)
EP (1) EP0237933B1 (enExample)
JP (1) JPS62214660A (enExample)
DE (1) DE3779153D1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63265461A (ja) * 1986-12-15 1988-11-01 Fuji Electric Co Ltd 半導体装置
SE461428B (sv) * 1988-06-16 1990-02-12 Ericsson Telefon Ab L M Foerfarande foer att paa ett underlag av halvledarmaterial framstaella en bipolaer transistor eller en bipolaer transistor och en faelteffekttransistor eller en bipolaer transistor och en faelteffekttransistor med en komplementaer faelteffekttransistor och anordningar framstaellda enligt foerfarandena
DE3824694A1 (de) * 1988-07-20 1990-02-01 Fraunhofer Ges Forschung Halbleiterschaltung fuer schnelle schaltvorgaenge
US6008687A (en) * 1988-08-29 1999-12-28 Hitachi, Ltd. Switching circuit and display device using the same
JP3315851B2 (ja) * 1995-12-19 2002-08-19 シャープ株式会社 広帯域増幅回路を用いる高速通信素子
US6549061B2 (en) * 2001-05-18 2003-04-15 International Business Machines Corporation Electrostatic discharge power clamp circuit
JP2003338620A (ja) * 2002-05-22 2003-11-28 Mitsubishi Electric Corp 半導体装置およびその製造方法
US9478537B2 (en) * 2009-07-15 2016-10-25 Cree, Inc. High-gain wide bandgap darlington transistors and related methods of fabrication
US9728580B2 (en) * 2013-05-13 2017-08-08 Infineon Technologies Ag Power transistor with integrated temperature sensor element, power transistor circuit, method for operating a power transistor, and method for operating a power transistor circuit
CN113381590A (zh) * 2020-03-09 2021-09-10 辉芒微电子（深圳）有限公司 含多级npn晶体管的驱动电路

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3534281A (en) * 1969-02-03 1970-10-13 Gen Electric Soft saturating transistor amplifier
IN141922B (enExample) * 1974-08-19 1977-05-07 Rca Corp
JPS53118356A (en) * 1977-03-25 1978-10-16 Nec Corp Darlington circuit containing clamping diode
JPS5559767A (en) * 1978-10-30 1980-05-06 Hitachi Ltd Semiconductor device, method of fabricating the same and application thereof
FR2458904A1 (fr) * 1979-06-12 1981-01-02 Thomson Csf Circuit integre monolithique equivalent a un transistor associe a trois diodes anti-saturation
GB2100513B (en) * 1981-06-04 1985-06-19 Texas Instruments Ltd Darlington transistor circuit

Also Published As

Publication number Publication date
EP0237933A3 (en) 1989-02-08
EP0237933B1 (en) 1992-05-20
EP0237933A2 (en) 1987-09-23
US4769560A (en) 1988-09-06
DE3779153D1 (de) 1992-06-25
JPH047097B2 (enExample) 1992-02-07

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Legal Events

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LAPS Cancellation because of no payment of annual fees