GB2100513B - Darlington transistor circuit - Google Patents
Darlington transistor circuitInfo
- Publication number
- GB2100513B GB2100513B GB8214326A GB8214326A GB2100513B GB 2100513 B GB2100513 B GB 2100513B GB 8214326 A GB8214326 A GB 8214326A GB 8214326 A GB8214326 A GB 8214326A GB 2100513 B GB2100513 B GB 2100513B
- Authority
- GB
- United Kingdom
- Prior art keywords
- transistor circuit
- darlington transistor
- darlington
- circuit
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB8214326A GB2100513B (en) | 1981-06-04 | 1982-05-17 | Darlington transistor circuit |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB8117202 | 1981-06-04 | ||
GB8214326A GB2100513B (en) | 1981-06-04 | 1982-05-17 | Darlington transistor circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
GB2100513A GB2100513A (en) | 1982-12-22 |
GB2100513B true GB2100513B (en) | 1985-06-19 |
Family
ID=26279688
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB8214326A Expired GB2100513B (en) | 1981-06-04 | 1982-05-17 | Darlington transistor circuit |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB2100513B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3435571A1 (en) * | 1984-09-27 | 1986-04-10 | Siemens AG, 1000 Berlin und 8000 München | MONOLITHICALLY INTEGRATED BIPOLAR DARLINGTON CIRCUIT |
JPS62214660A (en) * | 1986-03-17 | 1987-09-21 | Toshiba Corp | Semiconductor device |
-
1982
- 1982-05-17 GB GB8214326A patent/GB2100513B/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB2100513A (en) | 1982-12-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19940517 |