GB2100513B - Darlington transistor circuit - Google Patents

Darlington transistor circuit

Info

Publication number
GB2100513B
GB2100513B GB8214326A GB8214326A GB2100513B GB 2100513 B GB2100513 B GB 2100513B GB 8214326 A GB8214326 A GB 8214326A GB 8214326 A GB8214326 A GB 8214326A GB 2100513 B GB2100513 B GB 2100513B
Authority
GB
United Kingdom
Prior art keywords
transistor circuit
darlington transistor
darlington
circuit
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8214326A
Other versions
GB2100513A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Ltd
Original Assignee
Texas Instruments Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Ltd filed Critical Texas Instruments Ltd
Priority to GB8214326A priority Critical patent/GB2100513B/en
Publication of GB2100513A publication Critical patent/GB2100513A/en
Application granted granted Critical
Publication of GB2100513B publication Critical patent/GB2100513B/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
GB8214326A 1981-06-04 1982-05-17 Darlington transistor circuit Expired GB2100513B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB8214326A GB2100513B (en) 1981-06-04 1982-05-17 Darlington transistor circuit

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB8117202 1981-06-04
GB8214326A GB2100513B (en) 1981-06-04 1982-05-17 Darlington transistor circuit

Publications (2)

Publication Number Publication Date
GB2100513A GB2100513A (en) 1982-12-22
GB2100513B true GB2100513B (en) 1985-06-19

Family

ID=26279688

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8214326A Expired GB2100513B (en) 1981-06-04 1982-05-17 Darlington transistor circuit

Country Status (1)

Country Link
GB (1) GB2100513B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3435571A1 (en) * 1984-09-27 1986-04-10 Siemens AG, 1000 Berlin und 8000 München MONOLITHICALLY INTEGRATED BIPOLAR DARLINGTON CIRCUIT
JPS62214660A (en) * 1986-03-17 1987-09-21 Toshiba Corp Semiconductor device

Also Published As

Publication number Publication date
GB2100513A (en) 1982-12-22

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19940517