JPS62175999A - 不揮発性半導体記憶装置 - Google Patents

不揮発性半導体記憶装置

Info

Publication number
JPS62175999A
JPS62175999A JP61017211A JP1721186A JPS62175999A JP S62175999 A JPS62175999 A JP S62175999A JP 61017211 A JP61017211 A JP 61017211A JP 1721186 A JP1721186 A JP 1721186A JP S62175999 A JPS62175999 A JP S62175999A
Authority
JP
Japan
Prior art keywords
potential
node
mos transistor
transistor
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61017211A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0560200B2 (enrdf_load_stackoverflow
Inventor
Sumio Tanaka
田中　寿実夫
Shigeru Atsumi
渥美　滋
Nobuaki Otsuka
伸朗 大塚
Takashi Kamei
亀井　貴
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Device Solutions Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp
Priority to JP61017211A priority Critical patent/JPS62175999A/ja
Publication of JPS62175999A publication Critical patent/JPS62175999A/ja
Publication of JPH0560200B2 publication Critical patent/JPH0560200B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Logic Circuits (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP61017211A 1986-01-29 1986-01-29 不揮発性半導体記憶装置 Granted JPS62175999A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61017211A JPS62175999A (ja) 1986-01-29 1986-01-29 不揮発性半導体記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61017211A JPS62175999A (ja) 1986-01-29 1986-01-29 不揮発性半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS62175999A true JPS62175999A (ja) 1987-08-01
JPH0560200B2 JPH0560200B2 (enrdf_load_stackoverflow) 1993-09-01

Family

ID=11937606

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61017211A Granted JPS62175999A (ja) 1986-01-29 1986-01-29 不揮発性半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS62175999A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02187994A (ja) * 1989-01-13 1990-07-24 Toshiba Corp 半導体記憶装置
JP2007179729A (ja) * 2005-12-28 2007-07-12 Samsung Electronics Co Ltd 漏れ電流を防止するローデコーダ回路及びこれを備える半導体メモリ装置
JP2009230805A (ja) * 2008-03-24 2009-10-08 Renesas Technology Corp デコーダ回路

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60113397A (ja) * 1983-11-24 1985-06-19 Fujitsu Ltd プログラマブルリ−ドオンリメモリ装置
JPS60140598A (ja) * 1983-12-28 1985-07-25 Toshiba Corp 半導体回路

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60113397A (ja) * 1983-11-24 1985-06-19 Fujitsu Ltd プログラマブルリ−ドオンリメモリ装置
JPS60140598A (ja) * 1983-12-28 1985-07-25 Toshiba Corp 半導体回路

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02187994A (ja) * 1989-01-13 1990-07-24 Toshiba Corp 半導体記憶装置
JP2007179729A (ja) * 2005-12-28 2007-07-12 Samsung Electronics Co Ltd 漏れ電流を防止するローデコーダ回路及びこれを備える半導体メモリ装置
JP2009230805A (ja) * 2008-03-24 2009-10-08 Renesas Technology Corp デコーダ回路

Also Published As

Publication number Publication date
JPH0560200B2 (enrdf_load_stackoverflow) 1993-09-01

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Legal Events

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