JPS6217496Y2 - - Google Patents
Info
- Publication number
- JPS6217496Y2 JPS6217496Y2 JP1982199639U JP19963982U JPS6217496Y2 JP S6217496 Y2 JPS6217496 Y2 JP S6217496Y2 JP 1982199639 U JP1982199639 U JP 1982199639U JP 19963982 U JP19963982 U JP 19963982U JP S6217496 Y2 JPS6217496 Y2 JP S6217496Y2
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- carbon
- slits
- view
- quartz
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Crucibles And Fluidized-Bed Furnaces (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19963982U JPS59103767U (ja) | 1982-12-28 | 1982-12-28 | カ−ボン坩堝 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19963982U JPS59103767U (ja) | 1982-12-28 | 1982-12-28 | カ−ボン坩堝 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59103767U JPS59103767U (ja) | 1984-07-12 |
| JPS6217496Y2 true JPS6217496Y2 (cs) | 1987-05-06 |
Family
ID=30425165
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19963982U Granted JPS59103767U (ja) | 1982-12-28 | 1982-12-28 | カ−ボン坩堝 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59103767U (cs) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USD771167S1 (en) | 2013-08-21 | 2016-11-08 | A.L.M.T. Corp. | Crucible |
| CN105683425A (zh) * | 2013-10-30 | 2016-06-15 | 联合材料公司 | 坩埚以及使用了该坩埚的单晶蓝宝石的制造方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5747797A (en) * | 1980-09-05 | 1982-03-18 | Hitachi Ltd | Manufacturing apparatus for semiconductor single crystal |
-
1982
- 1982-12-28 JP JP19963982U patent/JPS59103767U/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59103767U (ja) | 1984-07-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3841863B2 (ja) | シリコン単結晶の引き上げ方法 | |
| US4944925A (en) | Apparatus for producing single crystals | |
| JPS6217496Y2 (cs) | ||
| JPH11147785A (ja) | 単結晶の製造方法 | |
| JPH01317188A (ja) | 半導体単結晶の製造方法及び装置 | |
| JP2002234792A (ja) | 単結晶製造方法 | |
| JPS60122791A (ja) | 液体封止結晶引上方法 | |
| JPH0725694A (ja) | 半導体単結晶育成装置の黒鉛るつぼ | |
| JP2922038B2 (ja) | 化合物半導体単結晶の製造方法 | |
| JP2766897B2 (ja) | 単結晶成長装置 | |
| JPH05139884A (ja) | 単結晶の製造方法 | |
| JP2700145B2 (ja) | 化合物半導体単結晶の製造方法 | |
| JPS58199796A (ja) | 液体封止結晶引上げ装置 | |
| Thornhill | Process and apparatus for growing a crystal ribbon | |
| JPS5950627B2 (ja) | 単結晶シリコン引上装置 | |
| JPH0380181A (ja) | 単結晶製造装置 | |
| JPH0380180A (ja) | 単結晶製造装置 | |
| JPS63107887A (ja) | 単結晶引上げ用るつぼ | |
| JPH0449185Y2 (cs) | ||
| JPS61106487A (ja) | 単結晶成長装置 | |
| JP3392245B2 (ja) | 化合物半導体単結晶の製造方法 | |
| JPH0524964A (ja) | 化合物半導体単結晶の製造方法 | |
| JPH0154318B2 (cs) | ||
| JP2773441B2 (ja) | GaAs単結晶の製造方法 | |
| JPH02212395A (ja) | 化合物半導体結晶の製造方法および製造装置 |