JPS6215957B2 - - Google Patents

Info

Publication number
JPS6215957B2
JPS6215957B2 JP54075813A JP7581379A JPS6215957B2 JP S6215957 B2 JPS6215957 B2 JP S6215957B2 JP 54075813 A JP54075813 A JP 54075813A JP 7581379 A JP7581379 A JP 7581379A JP S6215957 B2 JPS6215957 B2 JP S6215957B2
Authority
JP
Japan
Prior art keywords
write
circuit
digital line
writing
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54075813A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5693A (en
Inventor
Takeshi Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP7581379A priority Critical patent/JPS5693A/ja
Publication of JPS5693A publication Critical patent/JPS5693A/ja
Publication of JPS6215957B2 publication Critical patent/JPS6215957B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/10Programming or data input circuits
    • G11C16/12Programming voltage switching circuits

Landscapes

  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
JP7581379A 1979-06-15 1979-06-15 Write-in circuit for non-volatile semiconductor memory Granted JPS5693A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7581379A JPS5693A (en) 1979-06-15 1979-06-15 Write-in circuit for non-volatile semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7581379A JPS5693A (en) 1979-06-15 1979-06-15 Write-in circuit for non-volatile semiconductor memory

Publications (2)

Publication Number Publication Date
JPS5693A JPS5693A (en) 1981-01-06
JPS6215957B2 true JPS6215957B2 (enExample) 1987-04-09

Family

ID=13586990

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7581379A Granted JPS5693A (en) 1979-06-15 1979-06-15 Write-in circuit for non-volatile semiconductor memory

Country Status (1)

Country Link
JP (1) JPS5693A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5850700A (ja) * 1981-09-21 1983-03-25 Hitachi Ltd Eprom書込み回路
JPS6010497A (ja) * 1983-06-29 1985-01-19 Nec Corp 不揮発性半導体メモリ装置
JP2638916B2 (ja) * 1988-04-25 1997-08-06 日本電気株式会社 不揮発性半導体記憶装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54107638A (en) * 1978-02-10 1979-08-23 Sanyo Electric Co Ltd Memory data readout circuit in semiconductor memory unit

Also Published As

Publication number Publication date
JPS5693A (en) 1981-01-06

Similar Documents

Publication Publication Date Title
KR100454116B1 (ko) 비휘발성 메모리를 프로그래밍하기 위한 비트라인 셋업 및디스차지 회로
US5384743A (en) Structure and method for flash eprom memory erasable by sectors
KR0157342B1 (ko) 불휘발성 반도체 메모리의 전압 센싱 방법
KR910003388B1 (ko) 반도체 메모리
US6118705A (en) Page mode erase in a flash memory array
JP2004514238A (ja) ページ消去可能なフラッシュメモリおよびその制御方法
JPH07176698A (ja) 半導体集積回路装置
KR930703518A (ko) 소거특성을 개량한 플래쉬메모리 및 그것에 대한 회로
JPH0746515B2 (ja) デコ−ダ回路
US5805499A (en) Channel hot-carrier page write for NAND applications
US4805150A (en) Programmable semiconductor memory device having grouped high voltage supply circuits for writing data
JP3093655B2 (ja) 多値マスクromのワード線駆動方法及びその駆動回路
KR19990036007A (ko) 방해가 감소된 플래쉬 메모리 시스템 및 방법
US6208564B1 (en) High voltage comparator
JPH065085A (ja) 不揮発性半導体記憶装置
JPS6215957B2 (enExample)
US6246609B1 (en) Decoder circuit
US6240044B1 (en) High speed address sequencer
JPH09265787A (ja) 不揮発性半導体記憶装置
JP2542110B2 (ja) 不揮発性半導体記憶装置
US7042779B2 (en) Method and apparatus for reducing leakage current in a read only memory device using pre-charged sub-arrays
JPS6027118B2 (ja) 半導体メモリ装置
JPH0318275B2 (enExample)
JPH04229655A (ja) 不揮発性半導体記憶装置における消去方式
JPS6321998B2 (enExample)