JPS5693A - Write-in circuit for non-volatile semiconductor memory - Google Patents

Write-in circuit for non-volatile semiconductor memory

Info

Publication number
JPS5693A
JPS5693A JP7581379A JP7581379A JPS5693A JP S5693 A JPS5693 A JP S5693A JP 7581379 A JP7581379 A JP 7581379A JP 7581379 A JP7581379 A JP 7581379A JP S5693 A JPS5693 A JP S5693A
Authority
JP
Japan
Prior art keywords
write
circuit
semiconductor memory
dispersion
volatile semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7581379A
Other languages
Japanese (ja)
Other versions
JPS6215957B2 (en
Inventor
Takeshi Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7581379A priority Critical patent/JPS5693A/en
Publication of JPS5693A publication Critical patent/JPS5693A/en
Publication of JPS6215957B2 publication Critical patent/JPS6215957B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits

Landscapes

  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To obtain the memory element less in dispersion and having stable and uniform write-in and erase characteristics, by clamping the voltage on the digit lines at a voltage, through the use of two LGFETs of depletion and enhancement type. CONSTITUTION:The circuit consists of write-in selection IGFETM1, memory elements M2, M3, depletion type IGFETM4 and enhancement type IGFETM5. The drain of FETM1 is connected to the write-in power supply, the gate is to write-in signal VW, and the source is to digit line D respectively, the drains of M2, M3 are to the digit line D, the gates are to selection signals VA, VB and the sources are grounded. M4, M5 constitute the clamp circuit. Thus, write-in is made stably, the write-in and erase characteristics are uniform, and dispersion is less for the entire circuit.
JP7581379A 1979-06-15 1979-06-15 Write-in circuit for non-volatile semiconductor memory Granted JPS5693A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7581379A JPS5693A (en) 1979-06-15 1979-06-15 Write-in circuit for non-volatile semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7581379A JPS5693A (en) 1979-06-15 1979-06-15 Write-in circuit for non-volatile semiconductor memory

Publications (2)

Publication Number Publication Date
JPS5693A true JPS5693A (en) 1981-01-06
JPS6215957B2 JPS6215957B2 (en) 1987-04-09

Family

ID=13586990

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7581379A Granted JPS5693A (en) 1979-06-15 1979-06-15 Write-in circuit for non-volatile semiconductor memory

Country Status (1)

Country Link
JP (1) JPS5693A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5850700A (en) * 1981-09-21 1983-03-25 Hitachi Ltd Eprom writing circuit
JPS6010497A (en) * 1983-06-29 1985-01-19 Nec Corp Nonvolatile semiconductor memory device
JPH01273357A (en) * 1988-04-25 1989-11-01 Nec Corp Non-volatile semiconductor storage device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54107638A (en) * 1978-02-10 1979-08-23 Sanyo Electric Co Ltd Memory data readout circuit in semiconductor memory unit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54107638A (en) * 1978-02-10 1979-08-23 Sanyo Electric Co Ltd Memory data readout circuit in semiconductor memory unit

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5850700A (en) * 1981-09-21 1983-03-25 Hitachi Ltd Eprom writing circuit
JPS6350798B2 (en) * 1981-09-21 1988-10-11 Hitachi Ltd
JPS6010497A (en) * 1983-06-29 1985-01-19 Nec Corp Nonvolatile semiconductor memory device
JPH0140438B2 (en) * 1983-06-29 1989-08-29 Nippon Electric Co
JPH01273357A (en) * 1988-04-25 1989-11-01 Nec Corp Non-volatile semiconductor storage device

Also Published As

Publication number Publication date
JPS6215957B2 (en) 1987-04-09

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