JPS62158317A - Cvd装置用ガスノズル - Google Patents
Cvd装置用ガスノズルInfo
- Publication number
- JPS62158317A JPS62158317A JP29842885A JP29842885A JPS62158317A JP S62158317 A JPS62158317 A JP S62158317A JP 29842885 A JP29842885 A JP 29842885A JP 29842885 A JP29842885 A JP 29842885A JP S62158317 A JPS62158317 A JP S62158317A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- nozzle
- opening
- chamber
- gases
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007789 gas Substances 0.000 abstract description 49
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 5
- 239000012495 reaction gas Substances 0.000 abstract description 5
- 229910052710 silicon Inorganic materials 0.000 abstract description 5
- 239000010703 silicon Substances 0.000 abstract description 5
- 239000000428 dust Substances 0.000 abstract description 4
- 239000000203 mixture Substances 0.000 abstract description 3
- 208000037998 chronic venous disease Diseases 0.000 abstract 1
- 238000009489 vacuum treatment Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 14
- 239000010409 thin film Substances 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 102100025490 Slit homolog 1 protein Human genes 0.000 description 2
- 101710123186 Slit homolog 1 protein Proteins 0.000 description 2
- 239000000779 smoke Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29842885A JPS62158317A (ja) | 1985-12-28 | 1985-12-28 | Cvd装置用ガスノズル |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29842885A JPS62158317A (ja) | 1985-12-28 | 1985-12-28 | Cvd装置用ガスノズル |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62158317A true JPS62158317A (ja) | 1987-07-14 |
| JPH0588536B2 JPH0588536B2 (https=) | 1993-12-22 |
Family
ID=17859574
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29842885A Granted JPS62158317A (ja) | 1985-12-28 | 1985-12-28 | Cvd装置用ガスノズル |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62158317A (https=) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0747503A1 (en) * | 1995-06-09 | 1996-12-11 | Ebara Corporation | Reactant gas injector for chemical vapor deposition apparatus |
| JP2007254869A (ja) * | 2006-03-24 | 2007-10-04 | Kyoto Univ | 原料ガス噴出用ノズル及び化学的気相成膜装置 |
-
1985
- 1985-12-28 JP JP29842885A patent/JPS62158317A/ja active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0747503A1 (en) * | 1995-06-09 | 1996-12-11 | Ebara Corporation | Reactant gas injector for chemical vapor deposition apparatus |
| US5728223A (en) * | 1995-06-09 | 1998-03-17 | Ebara Corporation | Reactant gas ejector head and thin-film vapor deposition apparatus |
| KR100427426B1 (ko) * | 1995-06-09 | 2004-07-12 | 가부시키 가이샤 에바라 세이사꾸쇼 | 반응가스분사헤드및증기상박막성장장치 |
| JP2007254869A (ja) * | 2006-03-24 | 2007-10-04 | Kyoto Univ | 原料ガス噴出用ノズル及び化学的気相成膜装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0588536B2 (https=) | 1993-12-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW573027B (en) | Gas treating device, baffle member, and gas treating method | |
| JPH01283376A (ja) | 大気圧化学蒸着装置および方法 | |
| KR940009945B1 (ko) | 화학기상 성장장치 | |
| JP2005506446A (ja) | 原子層堆積装置及び方法 | |
| JP2004006551A (ja) | 基板処理装置および基板処理方法 | |
| JPS62158317A (ja) | Cvd装置用ガスノズル | |
| EP0378543B1 (en) | Gas injector apparatus for chemical vapor deposition reactors | |
| JP3081860B2 (ja) | 化学気相成長装置及び半導体装置の製造方法 | |
| JPS63141318A (ja) | 試料処理用ガス排気装置 | |
| JPS6257709B2 (https=) | ||
| KR101776401B1 (ko) | 균일한 반응가스 플로우를 형성하는 원자층 박막 증착장치 | |
| CN115261823B (zh) | 工艺腔室的进气装置、半导体工艺设备及半导体加工工艺 | |
| JPH04236425A (ja) | プラズマ処理装置 | |
| JP3530270B2 (ja) | 精密洗浄装置 | |
| JP2579821Y2 (ja) | 半導体製造装置 | |
| CN118866739A (zh) | 半导体工艺设备及其吹扫结构、清洁方法 | |
| JPH05198512A (ja) | 光cvd装置 | |
| JPS58206119A (ja) | 薄膜生成装置 | |
| US5362274A (en) | Blowing port for clean air of an apparatus for washing semiconductor materials | |
| JPH01198016A (ja) | 横形プラズマcvd装置 | |
| JPH02254714A (ja) | 半導体製造装置 | |
| JPH06101439B2 (ja) | Cvd装置のガスフロ−方法 | |
| JP2001267309A (ja) | 半導体製造装置 | |
| AU556652B2 (en) | Glow discharge deposition apparatus | |
| JPS627828B2 (https=) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |