JPS62148389A - 単結晶の成長方法 - Google Patents

単結晶の成長方法

Info

Publication number
JPS62148389A
JPS62148389A JP28798985A JP28798985A JPS62148389A JP S62148389 A JPS62148389 A JP S62148389A JP 28798985 A JP28798985 A JP 28798985A JP 28798985 A JP28798985 A JP 28798985A JP S62148389 A JPS62148389 A JP S62148389A
Authority
JP
Japan
Prior art keywords
single crystal
ampoule
furnace
temperature
compound semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP28798985A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0341432B2 (enrdf_load_stackoverflow
Inventor
Osamu Oda
修 小田
Kazuto Hirata
和人 平田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eneos Corp
Original Assignee
Nippon Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Mining Co Ltd filed Critical Nippon Mining Co Ltd
Priority to JP28798985A priority Critical patent/JPS62148389A/ja
Publication of JPS62148389A publication Critical patent/JPS62148389A/ja
Publication of JPH0341432B2 publication Critical patent/JPH0341432B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP28798985A 1985-12-23 1985-12-23 単結晶の成長方法 Granted JPS62148389A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28798985A JPS62148389A (ja) 1985-12-23 1985-12-23 単結晶の成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28798985A JPS62148389A (ja) 1985-12-23 1985-12-23 単結晶の成長方法

Publications (2)

Publication Number Publication Date
JPS62148389A true JPS62148389A (ja) 1987-07-02
JPH0341432B2 JPH0341432B2 (enrdf_load_stackoverflow) 1991-06-24

Family

ID=17724353

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28798985A Granted JPS62148389A (ja) 1985-12-23 1985-12-23 単結晶の成長方法

Country Status (1)

Country Link
JP (1) JPS62148389A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62223088A (ja) * 1986-03-26 1987-10-01 Sumitomo Metal Mining Co Ltd 化合物単結晶の育成方法
JPH01212291A (ja) * 1988-02-17 1989-08-25 Nippon Telegr & Teleph Corp <Ntt> 結晶育成方法および育成装置
JP2013507313A (ja) * 2009-10-08 2013-03-04 エーエックスティー，インコーポレーテッド 結晶成長装置および結晶成長方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5891096A (ja) * 1981-11-26 1983-05-30 Sumitomo Electric Ind Ltd 単結晶育成装置
JPS5943439A (ja) * 1982-09-02 1984-03-10 Shinko Electric Co Ltd 筆記内容表示印刷装置
JPS59172770U (ja) * 1983-05-09 1984-11-19 東北金属工業株式会社 垂直ブリツジマン方式結晶育成炉

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5891096A (ja) * 1981-11-26 1983-05-30 Sumitomo Electric Ind Ltd 単結晶育成装置
JPS5943439A (ja) * 1982-09-02 1984-03-10 Shinko Electric Co Ltd 筆記内容表示印刷装置
JPS59172770U (ja) * 1983-05-09 1984-11-19 東北金属工業株式会社 垂直ブリツジマン方式結晶育成炉

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62223088A (ja) * 1986-03-26 1987-10-01 Sumitomo Metal Mining Co Ltd 化合物単結晶の育成方法
JPH01212291A (ja) * 1988-02-17 1989-08-25 Nippon Telegr & Teleph Corp <Ntt> 結晶育成方法および育成装置
JP2013507313A (ja) * 2009-10-08 2013-03-04 エーエックスティー，インコーポレーテッド 結晶成長装置および結晶成長方法

Also Published As

Publication number Publication date
JPH0341432B2 (enrdf_load_stackoverflow) 1991-06-24

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