JPS6214473A - 半導体不揮発性記憶装置およびその書込み方法 - Google Patents
半導体不揮発性記憶装置およびその書込み方法Info
- Publication number
- JPS6214473A JPS6214473A JP15218685A JP15218685A JPS6214473A JP S6214473 A JPS6214473 A JP S6214473A JP 15218685 A JP15218685 A JP 15218685A JP 15218685 A JP15218685 A JP 15218685A JP S6214473 A JPS6214473 A JP S6214473A
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- address
- film
- insulating film
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- 239000012535 impurity Substances 0.000 abstract description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 14
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 14
- 239000000758 substrate Substances 0.000 abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052710 silicon Inorganic materials 0.000 abstract description 7
- 239000010703 silicon Substances 0.000 abstract description 7
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 6
- 239000012212 insulator Substances 0.000 abstract description 3
- 238000010276 construction Methods 0.000 abstract 2
- 238000009413 insulation Methods 0.000 abstract 2
- 239000010408 film Substances 0.000 description 52
- 239000010410 layer Substances 0.000 description 22
- 238000000034 method Methods 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000005641 tunneling Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
Landscapes
- Non-Volatile Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15218685A JPS6214473A (ja) | 1985-07-12 | 1985-07-12 | 半導体不揮発性記憶装置およびその書込み方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15218685A JPS6214473A (ja) | 1985-07-12 | 1985-07-12 | 半導体不揮発性記憶装置およびその書込み方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6214473A true JPS6214473A (ja) | 1987-01-23 |
| JPH0582748B2 JPH0582748B2 (enExample) | 1993-11-22 |
Family
ID=15534938
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15218685A Granted JPS6214473A (ja) | 1985-07-12 | 1985-07-12 | 半導体不揮発性記憶装置およびその書込み方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6214473A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1995019047A1 (en) * | 1991-08-29 | 1995-07-13 | Hyundai Electronics Industries Co., Ltd. | A self-aligned dual-bit split gate (dsg) flash eeprom cell |
| US6166409A (en) * | 1996-09-13 | 2000-12-26 | Alliance Semiconductor Corporation | Flash EPROM memory cell having increased capacitive coupling |
-
1985
- 1985-07-12 JP JP15218685A patent/JPS6214473A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1995019047A1 (en) * | 1991-08-29 | 1995-07-13 | Hyundai Electronics Industries Co., Ltd. | A self-aligned dual-bit split gate (dsg) flash eeprom cell |
| US6166409A (en) * | 1996-09-13 | 2000-12-26 | Alliance Semiconductor Corporation | Flash EPROM memory cell having increased capacitive coupling |
| US6429076B2 (en) | 1996-09-13 | 2002-08-06 | Alliance Semiconductor Corporation | Flash EPROM memory cell having increased capacitive coupling and method of manufacture thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0582748B2 (enExample) | 1993-11-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| EXPY | Cancellation because of completion of term |