JPH0582748B2 - - Google Patents
Info
- Publication number
- JPH0582748B2 JPH0582748B2 JP15218685A JP15218685A JPH0582748B2 JP H0582748 B2 JPH0582748 B2 JP H0582748B2 JP 15218685 A JP15218685 A JP 15218685A JP 15218685 A JP15218685 A JP 15218685A JP H0582748 B2 JPH0582748 B2 JP H0582748B2
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- insulating film
- film
- memory device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 69
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 35
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 33
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 26
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 26
- 239000000969 carrier Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 15
- 239000012212 insulator Substances 0.000 claims description 6
- 239000010408 film Substances 0.000 description 94
- 239000012535 impurity Substances 0.000 description 30
- 239000000758 substrate Substances 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000011159 matrix material Substances 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000005641 tunneling Effects 0.000 description 3
- 230000001939 inductive effect Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 241001191009 Gymnomyza Species 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HLXGRHNZZSMNRX-UHFFFAOYSA-M sodium;3-(n-ethyl-3,5-dimethylanilino)-2-hydroxypropane-1-sulfonate Chemical compound [Na+].[O-]S(=O)(=O)CC(O)CN(CC)C1=CC(C)=CC(C)=C1 HLXGRHNZZSMNRX-UHFFFAOYSA-M 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
Landscapes
- Non-Volatile Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15218685A JPS6214473A (ja) | 1985-07-12 | 1985-07-12 | 半導体不揮発性記憶装置およびその書込み方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15218685A JPS6214473A (ja) | 1985-07-12 | 1985-07-12 | 半導体不揮発性記憶装置およびその書込み方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6214473A JPS6214473A (ja) | 1987-01-23 |
| JPH0582748B2 true JPH0582748B2 (enExample) | 1993-11-22 |
Family
ID=15534938
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15218685A Granted JPS6214473A (ja) | 1985-07-12 | 1985-07-12 | 半導体不揮発性記憶装置およびその書込み方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6214473A (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3720358B2 (ja) * | 1991-08-29 | 2005-11-24 | ヒュンダイ エレクトロニクス インダストリーズ カムパニー リミテッド | 自己整列デュアルビット分割ゲートフラッシュｅｅｐｒｏｍセル |
| US6166409A (en) * | 1996-09-13 | 2000-12-26 | Alliance Semiconductor Corporation | Flash EPROM memory cell having increased capacitive coupling |
-
1985
- 1985-07-12 JP JP15218685A patent/JPS6214473A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6214473A (ja) | 1987-01-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| EXPY | Cancellation because of completion of term |