JPS621256B2 - - Google Patents
Info
- Publication number
- JPS621256B2 JPS621256B2 JP54086475A JP8647579A JPS621256B2 JP S621256 B2 JPS621256 B2 JP S621256B2 JP 54086475 A JP54086475 A JP 54086475A JP 8647579 A JP8647579 A JP 8647579A JP S621256 B2 JPS621256 B2 JP S621256B2
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- island
- region
- oxide film
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/03—Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
Landscapes
- Local Oxidation Of Silicon (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8647579A JPS5610945A (en) | 1979-07-10 | 1979-07-10 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8647579A JPS5610945A (en) | 1979-07-10 | 1979-07-10 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5610945A JPS5610945A (en) | 1981-02-03 |
| JPS621256B2 true JPS621256B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1987-01-12 |
Family
ID=13887985
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8647579A Granted JPS5610945A (en) | 1979-07-10 | 1979-07-10 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5610945A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4900699B2 (ja) * | 2007-01-29 | 2012-03-21 | 株式会社東芝 | 半導体装置の製造方法 |
-
1979
- 1979-07-10 JP JP8647579A patent/JPS5610945A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5610945A (en) | 1981-02-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2707977B2 (ja) | Ｍｏｓ型半導体装置およびその製造方法 | |
| US4306915A (en) | Method of making electrode wiring regions and impurity doped regions self-aligned therefrom | |
| JPS638622B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| JPH0355984B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| JPH1197693A (ja) | 半導体装置およびその製造方法 | |
| JP3152959B2 (ja) | 半導体装置及びその製造方法 | |
| JPH03178135A (ja) | 絶縁ゲート電界効果トランジスタ製造方法 | |
| JP2729422B2 (ja) | 半導体装置 | |
| JPS621256B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| JPH0127589B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| JP3038740B2 (ja) | 半導体装置の製造方法 | |
| JP2519541B2 (ja) | 半導体装置 | |
| JPS63211762A (ja) | 絶縁ゲ−ト型半導体装置とその製法 | |
| JPH0728043B2 (ja) | 半導体装置 | |
| JPH09102604A (ja) | 半導体装置 | |
| JPS6237543B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| JPH0491481A (ja) | Ｍｉｓ電界効果トランジスタ | |
| JP3148227B2 (ja) | 半導体装置の製造方法 | |
| JP3479393B2 (ja) | 半導体装置の製造方法 | |
| JPH04115537A (ja) | 半導体装置の製造方法 | |
| JPH03136274A (ja) | 半導体装置の製造方法 | |
| JP3349413B2 (ja) | 半導体装置の製造方法 | |
| JPH04139765A (ja) | 半導体装置 | |
| JPH01112770A (ja) | 半導体装置の製造方法 | |
| JPH03296272A (ja) | 半導体装置の製造方法 |