JPS62122263A - 半導体集積回路装置 - Google Patents

半導体集積回路装置

Info

Publication number
JPS62122263A
JPS62122263A JP60262750A JP26275085A JPS62122263A JP S62122263 A JPS62122263 A JP S62122263A JP 60262750 A JP60262750 A JP 60262750A JP 26275085 A JP26275085 A JP 26275085A JP S62122263 A JPS62122263 A JP S62122263A
Authority
JP
Japan
Prior art keywords
output
output circuit
gnd
transistor
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60262750A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0351312B2 (enExample
Inventor
Yukio Miyazaki
行雄 宮崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP60262750A priority Critical patent/JPS62122263A/ja
Publication of JPS62122263A publication Critical patent/JPS62122263A/ja
Publication of JPH0351312B2 publication Critical patent/JPH0351312B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/8312Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having different source or drain region structures, e.g. IGFETs having symmetrical source or drain regions integrated with IGFETs having asymmetrical source or drain regions

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
JP60262750A 1985-11-22 1985-11-22 半導体集積回路装置 Granted JPS62122263A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60262750A JPS62122263A (ja) 1985-11-22 1985-11-22 半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60262750A JPS62122263A (ja) 1985-11-22 1985-11-22 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS62122263A true JPS62122263A (ja) 1987-06-03
JPH0351312B2 JPH0351312B2 (enExample) 1991-08-06

Family

ID=17380063

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60262750A Granted JPS62122263A (ja) 1985-11-22 1985-11-22 半導体集積回路装置

Country Status (1)

Country Link
JP (1) JPS62122263A (enExample)

Also Published As

Publication number Publication date
JPH0351312B2 (enExample) 1991-08-06

Similar Documents

Publication Publication Date Title
KR100271844B1 (ko) 실리콘 온 인슐레이터 구조의 상보형 금속 산화막 반도체 회로
JPH035692B2 (enExample)
KR910006513B1 (ko) 바이폴라-상보형 금속산화물 반도체 인버터
KR970067344A (ko) 레벨 변환 회로 및 반도체 집적회로
US4948990A (en) BiCMOS inverter circuit
JPH0637624A (ja) レベル変換回路
JPS62122263A (ja) 半導体集積回路装置
JPH0380711A (ja) 半導体レベル変換装置
JPH0296428A (ja) 出力回路
JPS59200524A (ja) Cmosマルチプレクサ
JPS63250911A (ja) 半導体集積回路装置
JPH03179814A (ja) レベルシフト回路
JP3074906B2 (ja) 半導体回路
JPS62208715A (ja) 半導体集積回路
JP2607769Y2 (ja) 半導体装置
JPS6057724A (ja) 半導体集積回路
JP2785569B2 (ja) 3ステート・バッファ回路
JPS62195922A (ja) 半導体集積回路装置
JP4658360B2 (ja) 出力バッファ
US6559700B2 (en) Semiconductor integrated circuit
JP2552107B2 (ja) 同期式複合型集積回路装置
JPH0750562A (ja) 半導体集積回路装置
JPH02264519A (ja) 半導体装置
JPS5921227B2 (ja) インバ−タカイロソウチ
JPS6012787B2 (ja) 集積回路装置