JPS62109448U - - Google Patents
Info
- Publication number
- JPS62109448U JPS62109448U JP19940585U JP19940585U JPS62109448U JP S62109448 U JPS62109448 U JP S62109448U JP 19940585 U JP19940585 U JP 19940585U JP 19940585 U JP19940585 U JP 19940585U JP S62109448 U JPS62109448 U JP S62109448U
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- magnetic field
- microwave
- processing apparatus
- microwave plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims description 3
- 230000005684 electric field Effects 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
Landscapes
- Constitution Of High-Frequency Heating (AREA)
- Drying Of Semiconductors (AREA)
Description
第１図は本考案による装置の縦断面図、第２図
は第１図のＡ―Ａ線断面図である。 １……マグネトロン、２……円形導波管、３…
…ソレノイドコイル、４……放電管、５……処理
室、６……基板台、７……真空排気装置、８……
赤外線ランプヒータ、９……基板、１０……コン
トローラ。
は第１図のＡ―Ａ線断面図である。 １……マグネトロン、２……円形導波管、３…
…ソレノイドコイル、４……放電管、５……処理
室、６……基板台、７……真空排気装置、８……
赤外線ランプヒータ、９……基板、１０……コン
トローラ。
Claims (1)
- マイクロ波による電場と、磁場発生手段により
発生させた磁場とを互いに直交させて電子の共鳴
運動を引き起こし、これによつて処理ガスをプラ
ズマ化し、基板を処理するマイクロ波プラズマ処
理装置において、放電管の外部に基板加熱用の赤
外線ランプヒータを設置したことを特徴とするマ
イクロ波プラズマ処理装置。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1985199405U JPH056654Y2 (ja) | 1985-12-27 | 1985-12-27 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1985199405U JPH056654Y2 (ja) | 1985-12-27 | 1985-12-27 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62109448U true JPS62109448U (ja) | 1987-07-13 |
| JPH056654Y2 JPH056654Y2 (ja) | 1993-02-19 |
Family
ID=31160998
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1985199405U Expired - Lifetime JPH056654Y2 (ja) | 1985-12-27 | 1985-12-27 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH056654Y2 (ja) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55118636A (en) * | 1979-03-08 | 1980-09-11 | Toshiba Corp | Gas etching method and device |
| JPS5776846A (en) * | 1980-10-31 | 1982-05-14 | Fujitsu Ltd | Surface treating method for semiconductor |
-
1985
- 1985-12-27 JP JP1985199405U patent/JPH056654Y2/ja not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55118636A (en) * | 1979-03-08 | 1980-09-11 | Toshiba Corp | Gas etching method and device |
| JPS5776846A (en) * | 1980-10-31 | 1982-05-14 | Fujitsu Ltd | Surface treating method for semiconductor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH056654Y2 (ja) | 1993-02-19 |