JPS6210034B2 - - Google Patents

Info

Publication number
JPS6210034B2
JPS6210034B2 JP53095237A JP9523778A JPS6210034B2 JP S6210034 B2 JPS6210034 B2 JP S6210034B2 JP 53095237 A JP53095237 A JP 53095237A JP 9523778 A JP9523778 A JP 9523778A JP S6210034 B2 JPS6210034 B2 JP S6210034B2
Authority
JP
Japan
Prior art keywords
film
silicon oxide
oxide film
polycrystalline silicon
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53095237A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5521183A (en
Inventor
Masashi Oomori
Sotohisa Asai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9523778A priority Critical patent/JPS5521183A/ja
Publication of JPS5521183A publication Critical patent/JPS5521183A/ja
Publication of JPS6210034B2 publication Critical patent/JPS6210034B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Non-Volatile Memory (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)
JP9523778A 1978-08-03 1978-08-03 Method of manufacturing semiconductor device Granted JPS5521183A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9523778A JPS5521183A (en) 1978-08-03 1978-08-03 Method of manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9523778A JPS5521183A (en) 1978-08-03 1978-08-03 Method of manufacturing semiconductor device

Publications (2)

Publication Number Publication Date
JPS5521183A JPS5521183A (en) 1980-02-15
JPS6210034B2 true JPS6210034B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1987-03-04

Family

ID=14132145

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9523778A Granted JPS5521183A (en) 1978-08-03 1978-08-03 Method of manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JPS5521183A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59177882A (ja) * 1983-03-28 1984-10-08 トヨタ自動車株式会社 内燃機関用点火プラグ及び点火方法

Also Published As

Publication number Publication date
JPS5521183A (en) 1980-02-15

Similar Documents

Publication Publication Date Title
JPS6213814B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS6252963A (ja) バイポ−ラトランジスタの製造方法
JPH01274470A (ja) バイポーラ・トランジスタ装置及びその製造方法
JPS6210034B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS6252950B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH03116968A (ja) 半導体装置の製造方法
JPS6355954A (ja) 半導体装置の製造方法
JPS5878457A (ja) 半導体装置の製造方法
JPS6230494B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS58170030A (ja) 半導体装置の製造方法
JPS5968950A (ja) 半導体装置の製造方法
JPS60785B2 (ja) Mos型半導体装置の製造方法
JPH05335407A (ja) 半導体装置の製造方法
JPS6256671B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH0658965B2 (ja) 半導体装置の製造方法
JPH0216019B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS5919349A (ja) 半導体装置およびその製造方法
JPH065677B2 (ja) 半導体装置の製造方法
JPS6077460A (ja) 半導体装置の製造方法
JPS6281760A (ja) 半導体装置の製造方法
JPH0618211B2 (ja) 半導体装置の製造方法
JPS6154256B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS61147550A (ja) 半導体装置の製造方法
JPH0235465B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS60128663A (ja) 半導体装置の製造方法