JPS6197844U - - Google Patents
Info
- Publication number
- JPS6197844U JPS6197844U JP11033185U JP11033185U JPS6197844U JP S6197844 U JPS6197844 U JP S6197844U JP 11033185 U JP11033185 U JP 11033185U JP 11033185 U JP11033185 U JP 11033185U JP S6197844 U JPS6197844 U JP S6197844U
- Authority
- JP
- Japan
- Prior art keywords
- gate
- refractory metal
- source
- semiconductor substrate
- drain diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000003870 refractory metal Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 229910021332 silicide Inorganic materials 0.000 claims description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
第１図は従来の高融点金属もしくは高融点金属
硅化物ゲートのＭＯＳ型半導体装置を示す。第２
図は本考案によるＭＯＳ型半導体装置を示す。 １，４…ゲート配線、２，５…層間絶縁膜、３
，７…ＡｌもしくはＡｌ−Ｓｉ膜、６…多結晶シ
リコン膜。
硅化物ゲートのＭＯＳ型半導体装置を示す。第２
図は本考案によるＭＯＳ型半導体装置を示す。 １，４…ゲート配線、２，５…層間絶縁膜、３
，７…ＡｌもしくはＡｌ−Ｓｉ膜、６…多結晶シ
リコン膜。
Claims (1)
- 半導体基板に形成されたソース・ドレイン拡散
層、前記半導体基板上に薄い絶縁膜を介して形成
された高融点金属ないし高融点金属硅化物ゲート
、前記ソース・ドレイン拡散層からの引出し配線
及び前記ゲートからのゲート配線は、下層多結晶
シリコン膜及び上層アルミニウム膜から形成され
てなることを特徴とするＭＯＳ型半導体装置。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11033185U JPS6197844U (ja) | 1985-07-18 | 1985-07-18 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11033185U JPS6197844U (ja) | 1985-07-18 | 1985-07-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6197844U true JPS6197844U (ja) | 1986-06-23 |
Family
ID=30669455
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11033185U Pending JPS6197844U (ja) | 1985-07-18 | 1985-07-18 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6197844U (ja) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50125683A (ja) * | 1974-03-20 | 1975-10-02 | ||
| JPS5487174A (en) * | 1977-12-23 | 1979-07-11 | Cho Lsi Gijutsu Kenkyu Kumiai | Semiconductor |
-
1985
- 1985-07-18 JP JP11033185U patent/JPS6197844U/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50125683A (ja) * | 1974-03-20 | 1975-10-02 | ||
| JPS5487174A (en) * | 1977-12-23 | 1979-07-11 | Cho Lsi Gijutsu Kenkyu Kumiai | Semiconductor |