JPS6191948A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS6191948A
JPS6191948A JP59213859A JP21385984A JPS6191948A JP S6191948 A JPS6191948 A JP S6191948A JP 59213859 A JP59213859 A JP 59213859A JP 21385984 A JP21385984 A JP 21385984A JP S6191948 A JPS6191948 A JP S6191948A
Authority
JP
Japan
Prior art keywords
layer
resist
semiconductor substrate
positive resist
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59213859A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0467333B2 (cg-RX-API-DMAC10.html
Inventor
Shigeki Kato
茂樹 加藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP59213859A priority Critical patent/JPS6191948A/ja
Publication of JPS6191948A publication Critical patent/JPS6191948A/ja
Publication of JPH0467333B2 publication Critical patent/JPH0467333B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP59213859A 1984-10-12 1984-10-12 半導体装置の製造方法 Granted JPS6191948A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59213859A JPS6191948A (ja) 1984-10-12 1984-10-12 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59213859A JPS6191948A (ja) 1984-10-12 1984-10-12 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6191948A true JPS6191948A (ja) 1986-05-10
JPH0467333B2 JPH0467333B2 (cg-RX-API-DMAC10.html) 1992-10-28

Family

ID=16646199

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59213859A Granted JPS6191948A (ja) 1984-10-12 1984-10-12 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6191948A (cg-RX-API-DMAC10.html)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05283358A (ja) * 1992-02-07 1993-10-29 Sumitomo Metal Ind Ltd 半導体装置のコンタクトホール形成方法
US5308415A (en) * 1992-12-31 1994-05-03 Chartered Semiconductor Manufacturing Pte Ltd. Enhancing step coverage by creating a tapered profile through three dimensional resist pull back
JPH06151388A (ja) * 1992-11-12 1994-05-31 Sumitomo Metal Ind Ltd 半導体装置のコンタクトホール形成方法
CN104658906A (zh) * 2013-11-22 2015-05-27 上海和辉光电有限公司 一种半导体平坦化层的制作方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7600359B2 (en) 2002-05-09 2009-10-13 Seagate Technology Llc Method of merging two disks concentrically without gap between disks
US7083871B2 (en) 2002-05-09 2006-08-01 Maxtor Corporation Single-sided sputtered magnetic recording disks

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS505105A (cg-RX-API-DMAC10.html) * 1973-05-15 1975-01-20
JPS5694353A (en) * 1979-12-28 1981-07-30 Fujitsu Ltd Micropattern forming method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS505105A (cg-RX-API-DMAC10.html) * 1973-05-15 1975-01-20
JPS5694353A (en) * 1979-12-28 1981-07-30 Fujitsu Ltd Micropattern forming method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05283358A (ja) * 1992-02-07 1993-10-29 Sumitomo Metal Ind Ltd 半導体装置のコンタクトホール形成方法
JPH06151388A (ja) * 1992-11-12 1994-05-31 Sumitomo Metal Ind Ltd 半導体装置のコンタクトホール形成方法
US5308415A (en) * 1992-12-31 1994-05-03 Chartered Semiconductor Manufacturing Pte Ltd. Enhancing step coverage by creating a tapered profile through three dimensional resist pull back
CN104658906A (zh) * 2013-11-22 2015-05-27 上海和辉光电有限公司 一种半导体平坦化层的制作方法

Also Published As

Publication number Publication date
JPH0467333B2 (cg-RX-API-DMAC10.html) 1992-10-28

Similar Documents

Publication Publication Date Title
US5763143A (en) Process of exactly patterning layer to target configuration by using photo-resist mask formed with dummy pattern
JPS6191948A (ja) 半導体装置の製造方法
US4988609A (en) Method of forming micro patterns
KR100310541B1 (ko) 스텐실 마스크
US4612274A (en) Electron beam/optical hybrid lithographic resist process in acoustic wave devices
JPS6033505A (ja) 回折格子の製造方法
JPH06244156A (ja) パタ―ン形成法
JPS6120334A (ja) 半導体装置の製造方法
KR100431992B1 (ko) 레티클을 이용한 반도체소자의 제조방법
JPS6386550A (ja) 多層配線層の形成方法
JPH06151351A (ja) 電極形成方法
JPS61102739A (ja) パタ−ン形成方法
JPH0536600A (ja) 半導体装置の製造方法
JPH02214126A (ja) 半導体装置の製造方法
JPS6039834A (ja) 微細パタ−ンの形成方法
JP2811724B2 (ja) エッチング方法
JPH0236049B2 (cg-RX-API-DMAC10.html)
JPH05218212A (ja) 半導体装置の製造方法
KR100396689B1 (ko) 반도체소자의게이트제조방법
KR101096208B1 (ko) 반도체 소자의 소자 분리용 패턴 형성 방법
JPH03203239A (ja) 半導体装置の製造方法
JPH03104113A (ja) レジストパターンの形成方法
JPS61189503A (ja) 回折格子の製造方法
JPS62137831A (ja) 半導体装置の製造方法
JPS6114721A (ja) マスク作製方法