JPS6185858A - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JPS6185858A
JPS6185858A JP59208606A JP20860684A JPS6185858A JP S6185858 A JPS6185858 A JP S6185858A JP 59208606 A JP59208606 A JP 59208606A JP 20860684 A JP20860684 A JP 20860684A JP S6185858 A JPS6185858 A JP S6185858A
Authority
JP
Japan
Prior art keywords
word line
decoder
gate
memory cell
line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59208606A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0373146B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Mineo Hayashi
林　峰雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP59208606A priority Critical patent/JPS6185858A/ja
Publication of JPS6185858A publication Critical patent/JPS6185858A/ja
Publication of JPH0373146B2 publication Critical patent/JPH0373146B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
JP59208606A 1984-10-04 1984-10-04 半導体記憶装置 Granted JPS6185858A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59208606A JPS6185858A (ja) 1984-10-04 1984-10-04 半導体記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59208606A JPS6185858A (ja) 1984-10-04 1984-10-04 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS6185858A true JPS6185858A (ja) 1986-05-01
JPH0373146B2 JPH0373146B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-11-20

Family

ID=16558991

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59208606A Granted JPS6185858A (ja) 1984-10-04 1984-10-04 半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS6185858A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5239196A (en) * 1990-02-09 1993-08-24 Shuji Ikeda SRAM with dual word lines overlapping drive transistor gates

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5837948A (ja) * 1981-08-31 1983-03-05 Toshiba Corp 積層半導体記憶装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5837948A (ja) * 1981-08-31 1983-03-05 Toshiba Corp 積層半導体記憶装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5239196A (en) * 1990-02-09 1993-08-24 Shuji Ikeda SRAM with dual word lines overlapping drive transistor gates

Also Published As

Publication number Publication date
JPH0373146B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-11-20

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