JPS6176677A - 気相成長方法 - Google Patents

気相成長方法

Info

Publication number
JPS6176677A
JPS6176677A JP20024484A JP20024484A JPS6176677A JP S6176677 A JPS6176677 A JP S6176677A JP 20024484 A JP20024484 A JP 20024484A JP 20024484 A JP20024484 A JP 20024484A JP S6176677 A JPS6176677 A JP S6176677A
Authority
JP
Japan
Prior art keywords
film
reaction
mask
gas
vapor phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20024484A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0357189B2 (enrdf_load_stackoverflow
Inventor
Kazuo Maeda
和夫 前田
Toku Tokumasu
徳 徳増
Toshihiko Fukuyama
福山　敏彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Japan Inc
Original Assignee
Applied Materials Japan Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Japan Inc filed Critical Applied Materials Japan Inc
Priority to JP20024484A priority Critical patent/JPS6176677A/ja
Priority to US06/778,004 priority patent/US4702936A/en
Publication of JPS6176677A publication Critical patent/JPS6176677A/ja
Publication of JPH0357189B2 publication Critical patent/JPH0357189B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/308—Oxynitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
JP20024484A 1984-09-20 1984-09-25 気相成長方法 Granted JPS6176677A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP20024484A JPS6176677A (ja) 1984-09-25 1984-09-25 気相成長方法
US06/778,004 US4702936A (en) 1984-09-20 1985-09-20 Gas-phase growth process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20024484A JPS6176677A (ja) 1984-09-25 1984-09-25 気相成長方法

Publications (2)

Publication Number Publication Date
JPS6176677A true JPS6176677A (ja) 1986-04-19
JPH0357189B2 JPH0357189B2 (enrdf_load_stackoverflow) 1991-08-30

Family

ID=16421186

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20024484A Granted JPS6176677A (ja) 1984-09-20 1984-09-25 気相成長方法

Country Status (1)

Country Link
JP (1) JPS6176677A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61190074A (ja) * 1985-02-15 1986-08-23 Sharp Corp Ｔａ↓２Ｏ↓５膜の形成方法
US6814790B2 (en) 2001-12-21 2004-11-09 Benq Corporation Multicolor dye set and inkjet ink composition with high chroma

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5953674A (ja) * 1982-09-17 1984-03-28 Seiko Epson Corp 化学蒸着法
JPS59215731A (ja) * 1983-05-24 1984-12-05 Semiconductor Energy Lab Co Ltd 酸化珪素被膜作製方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5953674A (ja) * 1982-09-17 1984-03-28 Seiko Epson Corp 化学蒸着法
JPS59215731A (ja) * 1983-05-24 1984-12-05 Semiconductor Energy Lab Co Ltd 酸化珪素被膜作製方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61190074A (ja) * 1985-02-15 1986-08-23 Sharp Corp Ｔａ↓２Ｏ↓５膜の形成方法
US6814790B2 (en) 2001-12-21 2004-11-09 Benq Corporation Multicolor dye set and inkjet ink composition with high chroma

Also Published As

Publication number Publication date
JPH0357189B2 (enrdf_load_stackoverflow) 1991-08-30

Similar Documents

Publication Publication Date Title
JPS58135117A (ja) ダイヤモンドの製造法
JPH06330326A (ja) シリカ薄膜の製造方法
JPS6140035B2 (enrdf_load_stackoverflow)
JPS6177695A (ja) 気相成長方法
JPS6176677A (ja) 気相成長方法
JPH09118512A (ja) トリクロロシランの製造方法
JPH0360918B2 (enrdf_load_stackoverflow)
EP0204724B1 (en) Method for deposition of gallium arsenide from vapor phase gallium-arsenic complexes
US4609424A (en) Plasma enhanced deposition of semiconductors
JPS61234531A (ja) シリコン酸化物の作製方法
JPS6140034B2 (enrdf_load_stackoverflow)
JPS60206446A (ja) 光化学気相成長装置
JPH0341436B2 (enrdf_load_stackoverflow)
JPS61127119A (ja) シリコン結晶の成長方法
JPH0491428A (ja) 化学気相成長装置および該装置による半導体成長方法
JP2799849B2 (ja) 化学蒸着法によるダイヤモンドの合成方法
JPH0572742B2 (enrdf_load_stackoverflow)
JPS63476A (ja) 等方性熱分解炭素の製造法
JPS639742B2 (enrdf_load_stackoverflow)
JPS61103538A (ja) 気相成長方法
JPH01103991A (ja) 人工ダイヤモンド膜の形成方法
JPS6075328A (ja) 光気相反応方法および反応装置
JPS63288998A (ja) 単結晶炭化珪素の形成方法
JPS62216997A (ja) ダイヤモンドの析出方法及びその装置
JPH0387028A (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees