JPS6163068A - 発光素子 - Google Patents

発光素子

Info

Publication number
JPS6163068A
JPS6163068A JP59184083A JP18408384A JPS6163068A JP S6163068 A JPS6163068 A JP S6163068A JP 59184083 A JP59184083 A JP 59184083A JP 18408384 A JP18408384 A JP 18408384A JP S6163068 A JPS6163068 A JP S6163068A
Authority
JP
Japan
Prior art keywords
layer
light
wiring
impressed
light emission
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59184083A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0344427B2 (enExample
Inventor
Sadaji Yoshida
吉田　貞史
Eiichiro Sakuma
作間　栄一郎
Shunji Misawa
俊司 三沢
Shunichi Gonda
権田　俊一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP59184083A priority Critical patent/JPS6163068A/ja
Publication of JPS6163068A publication Critical patent/JPS6163068A/ja
Publication of JPH0344427B2 publication Critical patent/JPH0344427B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/826—Materials of the light-emitting regions comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires

Landscapes

  • Led Devices (AREA)
JP59184083A 1984-09-03 1984-09-03 発光素子 Granted JPS6163068A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59184083A JPS6163068A (ja) 1984-09-03 1984-09-03 発光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59184083A JPS6163068A (ja) 1984-09-03 1984-09-03 発光素子

Publications (2)

Publication Number Publication Date
JPS6163068A true JPS6163068A (ja) 1986-04-01
JPH0344427B2 JPH0344427B2 (enExample) 1991-07-05

Family

ID=16147096

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59184083A Granted JPS6163068A (ja) 1984-09-03 1984-09-03 発光素子

Country Status (1)

Country Link
JP (1) JPS6163068A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5326992A (en) * 1992-07-29 1994-07-05 The United States Of America As Represented By The Secretary Of The Navy Silicon carbide and SiCAlN heterojunction bipolar transistor structures

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5994479A (ja) * 1982-11-19 1984-05-31 Sanyo Electric Co Ltd 青色発光素子

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5994479A (ja) * 1982-11-19 1984-05-31 Sanyo Electric Co Ltd 青色発光素子

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5326992A (en) * 1992-07-29 1994-07-05 The United States Of America As Represented By The Secretary Of The Navy Silicon carbide and SiCAlN heterojunction bipolar transistor structures

Also Published As

Publication number Publication date
JPH0344427B2 (enExample) 1991-07-05

Similar Documents

Publication Publication Date Title
US4473938A (en) Method for making a GaN electroluminescent semiconductor device utilizing epitaxial deposition
US5027168A (en) Blue light emitting diode formed in silicon carbide
US5247533A (en) Gallium nitride group compound semiconductor laser diode
US8895958B2 (en) Light emitting element and method for manufacturing same
JP3472305B2 (ja) Ｉｉｉ族窒化物の能動層をもつ長寿命垂直構造発光ダイオード
US8178940B2 (en) Schottky barrier diode and method for using the same
US6730941B2 (en) Boron phosphide-based semiconductor light-emitting device, production method thereof, and light-emitting diode
JPH0268968A (ja) 化合物半導体発光素子
US3990096A (en) Semiconductor luminescent device
JP2005183930A (ja) 半導体発光素子及びその製造方法
JP2940699B2 (ja) ｐ型ＳｉＣの電極形成方法
JP4041908B2 (ja) 半導体発光素子の製造方法
US6774402B2 (en) Pn-juction type compound semiconductor light-emitting device, production method thereof and white light-emitting diode
JPS6163068A (ja) 発光素子
US5554877A (en) Compound semiconductor electroluminescent device
KR20120029256A (ko) 반도체 발광소자 및 이를 제조하는 방법
JP3633018B2 (ja) 半導体発光装置
JPH06104484A (ja) 半導体素子
JP2000349335A (ja) Ｉｉｉ族窒化物半導体発光素子
JPS5958877A (ja) 半導体発光装置
TW457730B (en) Light-emitting device and method for fabricating the same
JPH06112525A (ja) 発光デバイス用ヘテロ接合素子
JPH10107321A (ja) 半導体素子の電極形成方法
JPH0234979A (ja) ダイオード素子及びその製造方法
JP2993654B2 (ja) 電極構造

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term