TW457730B - Light-emitting device and method for fabricating the same - Google Patents

Abstract

The present invention relates to a light-emitting device characterized by low operating voltage, high luminance, and long life and a method for fabricating the same. An n type semiconductor layer, an active layer, and a p type semiconductor layer are sequentially formed on a substrate and then a part of the n type semiconductor layer is exposed. Subsequently, a current spreading transparent electrode is formed on the p type semiconductor layer and then thermally processed. An n type electrode is then formed on the exposed n type semiconductor layer and a p type electrode is formed on the current spreading transparent electrode.

Description

4 i 7 7 3 Ο… y: charge > _____ V. Description of the invention (1) Background of the invention 1. Field of the invention The field of invention of the present invention relates to light-emitting devices, especially light-emitting devices and manufacturing methods thereof, wherein the light-emitting device The operating voltage is quite low and the illumination is quite high. 2. Related technical description Basically, a two- or five-group compound semiconductor is used to manufacture a blue light-emitting device, which is expressed as I n xGa yA 1 ZN (χ + y + z = 1, 0 < x < 1, 0 < y < 1, 〇 < 2 < 1) o Group II and V semiconductors are semiconductors of direct light transmission type, which have relatively high radiation efficiency, and a relatively wide wavelength β from the yellow region to the purple region 'and even the ultraviolet region. Therefore, it can be used in short-wavelength light-emitting devices. Compound semiconductors are manufactured by applying molecular beam epitaxy (MBE), metal organic vapor phase epitaxy (MOVPE) or hydrogen-containing vapor phase epitaxy (HVPE). In MOVPE, a semiconductor layer is grown on a substrate by heating the substrate at atmospheric pressure and low pressure and adding an organometallic compound to the substrate to grow the semiconductor layer. The metal compound contains a Group III element and a coarse material containing a Group V element gas. The advantages of MOVPE are uniform growth and high quality on a very wide substrate

Page 4 ^ 57730 fS- u f? ______ 5. Description of the invention (2) The three or five compound semiconductors. Hereinafter, the manufacturing of a blue light emitting device using the MOVPE growth method is explained. First, as shown in FIG. 1A, n-type nitrogen arsenide three-five compound semiconductors 12'-In xGa nx) N (0 < X < 1) active layers are grown from epitaxial growth on a sapphire substrate 11 respectively. 10, and a p-type nitrogen arsenide three or five compound semiconductor 1 3. A specific region in the P-type semiconductor layer 13 and the lower active layer 10 and a part of the n-type semiconductor layer 12 are etched to expose a part of the n-type semiconductor layer 12. Thereafter, a heat treatment is performed at a temperature of about 70 (TC to 100 CTC) for 10 seconds to 30 minutes. A heat treatment is performed to remove hydrogen element from the p-type semiconductor layer 13, and grow from MOVPE and include complex Hydrogen and dopant Mg. However, it cannot be used for holes that carry current, so the dopant Mg (hole) is activated to allow current to be carried. However, during heat treatment, it is released from above the p-type semiconductor layer 13 Nitrogen, so the surface of the p-type semiconductor layer 13 is changed to a high-concentration n-type. Then, a p-type electrode is formed according to the following steps so that the Schottky contact is made instead of the ohmic contact, so that an error will occur in the transmission current. This error function causes the operating voltage of the light-emitting device to be lost by 2 V to 3 V, and increases the resistance of the light-emitting device, thereby causing a slight heat generation. This will cause the characteristics of the light-emitting device to deteriorate, and the life of the device during long-term operation It will be shorter. As shown in FIG. 1B, an n-type electrode 14 'is formed on the exposed n-type semiconductor layer 12 and processed at about 700 degrees C to make the n-type electrode 14 and the n-type half guide

Page 5 V. Description of the invention (3) --- The ohmic contact between the body layers 12 is reached. An n-type electrode is formed before the P-type electrode is formed. Basically, high-temperature processing is required before low-temperature processing. As shown in FIG. 1C, a P-type electrode 15 is formed on the P-type semiconductor layer 13, and a heat treatment is performed at a temperature of about 500c. In order to achieve ohmic contact between the p-type electrical i15 and the p-type semiconductor layer 13. Pi electrode 15 and finally, as shown in FIG. 1D, A 4 A, μ: ^ u deposits a drawer M. / A on the entire surface of the p-type semiconductor layer 13 including the P-type electrode 15 to make a ceremony. The thickness is quite thin, about 200 angstroms, and it includes 1 pass ^. The transparent electrode 16 is dispersed mechanically. This completes the fabrication of the light-emitting device. The entire surface of the 16ΛP-type semiconductor layer 13 forms a current-dispersed transparent layer. = The entire layer of the activation layer 10 is allowed to pass from the p-type semiconductor layer 13 to the light. The drying out of 13 is done in a way that allows a current to be applied to the entire surface of the p-type semiconductor slide 1 3.

"I, I I semi-Γ" because the current-dispersing transparent electrode 16 and the p-type semiconductor layer 13 are changed to A. The p-type semiconductor layer has been produced during the heat treatment of Fig. 18, and the η-type is generated at the south concentration. 'The Shaw contact was quite effective. So the problem is when the electrode is supplying current. Due to the poor current distribution, light only flows from ρ

Since J is emitted from the periphery of Γ as described above, the illumination intensity is deteriorated. The conventional medium ′ traditionally used light-emitting device has the disadvantages of increasing light emission, reducing installation voltage and resistance, reducing illumination, and generating high temperature and heat, and reducing the life of the device.

Page 6 4i7? 30; P / ^ if, _ V. Description of the invention (4 ^^^ ~-Summary of the invention The invention relates to a method of a light-emitting device, which can improve the present invention in the conventional technology. The purpose is A method of providing a device 'wherein the light emitting device has another object of the present invention is a method of providing a light emitting device, wherein the light emitting device has another object of the present invention is a method of providing a light device, wherein the life of the device is reduced. The description can understand the advantages of the description in this specification and the patent application. In order to achieve the above purpose and advantages, a method for manufacturing a light emitting device includes forming a first conductive type semiconductor layer and a second conductive plastic type semiconductor layer on a substrate. ; A semiconductor layer, a part of the semiconductor layer of the type in the lower activation layer, and a part of the semiconductor layer of the type; forming a current dispersion on the semiconductor layer; a fourth step: the exposed first conductive layer; A conductive type of electrode, and one or more limitations and disadvantages of the light-emitting device and the light-emitting device used to make the light-emitting device are relatively low. A light-emitting device and the illuminance used to manufacture the device are relatively high. A light-emitting device and the thermal resistance and heat used to manufacture the device extend the features and advantages of the device invention, and the text further understands the purpose of the invention and The present invention provides a method for manufacturing the following steps: a first step: a fractional semiconductor layer, an activation layer; a second step: removing the specific region of the second conductivity type and the first conductivity, and Three steps of exposing the first conductive type: forming a second electrode of the second conductive type and performing heat treatment; and forming a first dispersed transparent electrode on the semiconductor layer of the electrical type to form a second electrode.

Page 7 4 6 7 7 3 (3th of the year of “Amendment / Correction / Supplement V. Explanation of the Invention (5) ---- Two-Conductivity Type Electrode” This current-dispersing transparent electrode consists of Ni, pd, and, A single metal selected from Ti, v, and Nd, or an alloy thereof, or a multilayer metal stacked from the metal. In a non-oxygen or inert atmosphere, the current is in an environment of 4,000 to 100,000. The dispersed transparent electrode is heat-treated for 10 seconds to 3 hours. &Quot; On the other hand, the present invention provides a light-emitting device including: a substrate; a first conductive type semiconductor layer is formed on the substrate; and the first conductive type semiconductor is provided on the substrate. Forming an active layer on a specific region of the layer; forming a second conductive type semiconductor layer on the active layer; forming a current-dispersing transparent electrode on the second conductive type semiconductor layer; and forming the first conductive plastic semiconductor layer and the current Two electrodes are respectively formed on the dispersed transparent electrodes. The features and advantages of the present invention can be further understood from the description below, and please refer to the drawings when reading. This study familiarizes Ming Yushu with a single series of diagrams. The composition of the pattern diagram and the original Mingfa of each Ϊ1 book is described in the book used for the Department 1 as the middle view; The installation of the light installation, the light installation, the light-making system, the invention of the system, the transmission of the production system, according to the instructions DD 1 2 to AA 11 ολμ

Page 8

Correction / correction / supply of July% V. Description of the invention (6) Figure 3 shows the current and voltage characteristics of the present invention and the conventional technology; Figure 4 shows the photo of the quality degradation of the current-dispersing transparent electrode in Figure 2 D; Hole carrier concentration for CV (capacitance voltage) measurement in the present invention and the conventional technology. Description of the drawing number: 1 0 activation layer 11 sapphire substrate 1 2 nitride tri-V5 compound semiconductor 13p type semiconductor layer 1 4n-type electrode 2 0 activation layer 21 sapphire substrate 2 2 n-type arsenide III-V compound semiconductor layer 23ρ Nitrogen arsenide group III-V compound semiconductor layer 2 4 η-type electrode 25 5 lower active layer 27 7 detailed description of the preferred embodiment of the current-dispersing transparent electrode: The preferred embodiment will be described in detail below, and shown in the accompanying drawings. Referring to the drawings, the following describes a light-emitting device and a device for manufacturing the same

Feeling 57 7 3 L. ^ Ji Nian ,, Qin 9 ¾ Xiu. / More ^ V. Description of the invention (7) Method. Before explaining the present invention, the items used in the present invention are defined as follows. First: ·, Group III-V compound semiconductors of nitrogen arsenide "means a semiconductor I-compound containing Group III elements such as GaN, GaAIN, InAlGaN. This compound semiconductor is composed of ηχΑ1 yGa (1-xy) ( OS 1, 0 'yS 1, 0S x + yS 1) ο Second, when an electrode is used,' this item is light-transmitting refers to a case when light emitted from a group III-5 semiconductor is 10%. This does not mean that the electrode must be colorless or transparent. The third 'metal material containing at least two metals is that these materials must have previously been alloys' or these metals are stacked to form a multilayer structure. When the metal material contains at least two metals, The content of this metal is not limited, but it is preferred that each metal account for at least 1% of the atomic percentage. Figure 2 3D is a cross-sectional view showing the manufacturing process of the light-emitting device of the present invention. Eight rectifier stones e on the transparent sapphire substrate 21 having electrical insulation properties, respectively, worm crystal growth η; e * vL from the activation layer 20, and one] two ^ three five compound semiconductor layer 22, one here, formed Thick nitrogen-selective III-V compound semiconductors Layer 23. hp n-type semiconductor layer 22, such as Si, Ge, Se, and about 1 to 500 n m, and doped easily available, so two n-type impurities. Si is the lowest price, and This special grant # # forms a recommendation of this type. And doping such as Be, sr, conductor layer 23, its thickness is about 0.2 to 100 to m, and corresponds to the current recommendation of deep sound.… '其 incorporating has 3 Impurities such as 'Zn' or Mg. Mg is easy to get impurities with excellent uniformity.

Page 10 S ?? 3

'Invention note 1 using p

Part, the active ion in the P-type channel etches a part of the n-type semiconductor layer 22? Part of the body 23 and the lower activation layer 20 may expose a part of W. In the above, i ϊ 1 i as shown in FIG. 2B, the entire surface of the P-type semiconductor layer 23 is heat-treated. LV A has a light-transmitting current-dispersing transparent electrode 25, and then performs ohmic contact with the P-type semiconductor layer 23 and the current-dispersing transparent. The electrodes 25 touch each other, and the P-type semiconductor layer 23 is activated. Here, the 'current-dispersing transparent electrode 25 may be formed of a suitable metal material. Gold, the material can be a single metal selected from Pd, Cr, Ti, v, Zr, Ce, and Nd. This metal can be selected from the p-type semiconductor layer 23, an alloy of such metals, or a multilayer metal in which certain metals are stacked. Absorbs hydrogen. If the current-dispersing transparent electrode 25 contains this metal, and the current-dispersing transparent electrode 25 absorbs the metal from the upper surface of the p-type semiconductor layer 23. This allows a fairly good ohmic contact to be obtained between the p-type semiconductor layer 23 and the current-dispersing transparent electrode 25. As a result, the voltage drop between the p-type semiconductor layer 23 and the current-dispersing transparent electrode 25 is reduced. Therefore, the operating voltage of the entire light-emitting device is only reduced by a small amount. In the embodiment of the present invention, between T i, pd and- A current-dispersed transparent electrode 2 5 ** is formed in the multilayer structure, that is, τ i is formed on the p-type semiconductor layer 23, and then P dA N i is stacked on T i, respectively.

During the heat treatment, an alloy of the transparent electrode 25 having a multilayer structure can be formed.

Page 11 /? Correction / Correction / Supplementary V. Description of the invention (9) At this time, the heat treatment can be performed at a temperature of about 50 (TC or higher). If the current disperses the transparent electrode 2 5 at less than 5 0 0 If the heat treatment is performed at a temperature below ° C, it is impossible to achieve a good ohmic contact, and the p-type semiconductor layer 2 3 is not activated. The decomposition temperature of the compound semiconductor (below about 120 (rc), and lower than the degradation point of the metal material for the current-dispersing transparent electrode 25. In the embodiment of the present invention, it is' about 400 to 100. The heat treatment is performed at a temperature between 500 and 70 (TC 〇).

Moreover, it is performed in a hot place for 10 seconds to 3 hours. In particular, a more appropriate time is about 20 minutes to one hour. Preferably, this is done in an inert body or in a non-oxygen atmosphere such as nitrogen (N2). If the heat treatment is performed in the above case, the specific resistivity of the p-type semiconductor layer 23 can be reduced. This is because at a temperature of 400 ° C or higher, the nitrogen element of the acceptor impurity bound in the lip type semiconductor layer 23 will disappear, thereby activating the acceptor impurity. In order to reduce the specific resistivity in the p-type semiconductor layer 23 in the conventional technology, 'insulating layers such as GoN' AIN, I nN, etc. are added to the p-type kuni nitrogen semiconductor layer ', so that the nitrogen element can be prevented from being p-type nitrided. The arsenic semiconductor layer disappeared on the surface.

In the present invention, since the heat-dissipating transparent electrode 25 is subjected to heat treatment after deposition, a locally high thermal conductance is generated at the deposited transparent electrode 25, so that a good activated acceptor impurity can be obtained.

Page 12 457 73 / $ year " month correction / star ^ thin dragon five, description of invention (ίο) "-Lei ^^ and Pd, Ti 'V, Zr, Ce or ⑽ form transparency = ^ The second feature is The hydrogen element 'that can be absorbed in the p-type semiconductor layer 23 acts as a catalyst in the activation of impurities, and makes the semiconductor layer have a lower resistance β. In addition, because between the p-type semiconductor layer 23 and the transparent electrode " An excellent ohmic contact is formed at the interface, so it has the advantage that the voltage drop at the interface between the transparent electrode 25 and the semiconductor layer 23 can be minimized. The thickness of the metal material as the transparent electrode 25 is from 0 to 0. Between 100 and 100 angstroms. Especially preferably, the thickness is between 100 and 1000 angstroms. 9 w Some metal materials of the transparent electrode 25 diffuse through the inside of the p-type semiconductor layer 23, and some These transparent electrodes diffuse outward during the heat treatment. = If the transparent electrode 25 is thinner than 100 Angstroms, the resistance of the metal itself tends to L. If the thickness of the transparent electrode 25 is about 100 Angstroms, as shown in the figure, During heat treatment at about 500 to 700 degrees c, the metal surface will deteriorate. FIG 2 C are not 'after completion of the heat treatment, η-type electrode on the exposed n exposed portion of the semiconductor layer 22 of plastic widely used NIE 24. τ · A1 τ ...

A metal such as Ci is used as a material of the n-type electrode 24. 1 11 1 and its mother 丨 Feng Liming ", the centroid electrode 24, Μ formula is to form a ^ layer with a thickness of about 0 angstrom on the η 孓 + conductor layer 22, and a τ i layer of about 200 angstrom at c degrees And on top of the τ i layer; f is thick and thick. Lazeng forms A2 with a thickness of about 200 angstroms, such as evaporation or electroplating to form a η-type electrode. Here, the method currently used, 24. 457 7 3ι V. Invention Explanation (Π) ~~~~ Gold can form η-type electrodes with or without heat treatment. The η-type semiconductor layer lacks nitrogen on the surface, and the transparent electrode 25 and ρ-type semiconductor layer are dispersed by the activation current. During the heat treatment of 23, the η-type semiconductor layer with a concentration of f may not necessarily need to be processed. If the heat treatment is performed, the temperature of about 10 and 3 is performed at a temperature of about 5000 to 900 ° C. The heat treatment is performed for 0 minutes. 'Subsequently, as shown in FIG. 2D, a mouth shape 26 is formed on the p-type semiconductor layer 23 to be performed last. The P-type electrode 26 is subjected to a pad electrode during the packaging period of the light emitting device = , For wire bonding, forming a metal material to prevent long-term operation of the device, wire bonding The Au spheres used here diffuse and penetrate through the mouth semiconductor 2 3 °. The metal materials used for the p-type electrode 26 are not particularly limited, but can be among the following representative and widely used metal materials A combination of one or more items, the metal material is Cr, Ni, Au, In, Pt, Mo, pd,

Ge 'Si, Ti, W, Zr, Ta, Cu, Pb, Ag, Sn and Zn. In the embodiment of the present invention, the p-type electrode 26 includes three layers of metal, respectively, firstly forming Cr with excellent adhesion, forming a Ni layer with a thickness of about 300 angstroms on CrV | and forming it on the Ni layer. A layer with a thickness of about 2000 Angstroms. After Yuancheng deposits three layers of metal, heat treatment is performed for 30 seconds to 30 minutes, and the treatment thickness is about 500 to 70 CTC to enhance the cohesion of the current-dispersing transparent electrode 25 and the p-type electrode 26. .

Page 14 457730 Correction Z Supplement ---------- ^ V. Description of the Invention (12) An embodiment of the light-emitting device manufactured in accordance with the process described in the present invention is described in the following test mode: First embodiment: In the present invention, In the first embodiment, a current-dispersing transparent electrode is formed according to the following method: Ti ′ is formed under the p-type semiconductor layer to a thickness of about 10 angstroms; pd is formed on the Ti layer to a thickness of about 50 angstroms; 50 angstrom Nb is then subjected to a heat treatment at a temperature of about 70 ° C. for about 30 minutes to activate the p-type semiconductor layer. ^ ΜA々 her current and voltage characteristics will be compared

An implementation w J comparison based on the above steps was performed, and the results are shown in FIG. 3. Curve B indicates the current-voltage characteristics of the light-emitting device manufactured according to the conventional technology, where the electrical Is of the device is 7 and more heat is generated, and the illuminance is 20 mcd. Based on a comparison of line A indicating the current-voltage characteristics of the present invention and line B of the conventional technology, it can be seen that the threshold voltage is improved by 2-3V 'and the operating voltage is improved by about 3 to 4V. Moreover, the resistance of the device is less than 30Ω, and compared with the conventional technology, the heat generated is reduced by about 50%, and the illuminance is improved by about 35mcd. At the same time, if the concentration distribution measured by the CV (capacitance voltage) shown in FIG. 5 appears, it can be seen that the impurity concentration of the P-type semiconductor layer is from 2 × 1 0 to 7 cm -3 (line B in FIG. 5) (the conventional technique The method in the method) is increased to 2 × 1018cnr3 (line A in FIG. 5), which is increased by 10 times.

Page 15 457730 V. Description of the invention (13) Looking at the measurement results, it can be seen that many hydrogen elements escape from the P-type semiconductor layer and are absorbed by the current-dispersing transparent electrode, but from the P-type semiconductor layer. The escaping hydrogen element contributes to the concentration of the hole carrier. Second Embodiment In the second embodiment of the present invention, the same state as in the first embodiment is used, except that the heat treatment of the p-type semiconductor is performed at a temperature of about 600 ° C for 30 minutes. The light-emitting device of this embodiment is characterized in that the critical voltage is 2.4 volts, the operating voltage is 3.5 V, the resistance is less than 35 Ω, and the illumination is about 3 5 m c d. Third Embodiment The state of the third embodiment of the present invention is the same as that of the first embodiment, except that the p-type semiconductor is heat-treated at about 500 ° C for 30 minutes. In the light-emitting device of the embodiment, the characteristics are The critical voltage is 2. 7V, the operating voltage is 3. 9 V, and the resistance is less than 40 Ω. The quality of the third embodiment is much lower than that of the first and second embodiments. This is because the activation of the P-type semiconductor is smaller than that of the second and third embodiments. The illuminance of this embodiment is 30 mcd. Fourth Embodiment In a fourth embodiment of the present invention, the formation of a current-dispersing transparent electrode

Page 16 ^ 57730 Qiaonian / 丨 TplB repair i :: · / correction / key charge

The thickness of Ni is about 100 angstroms, and in the fifth aspect of the invention (14), Au is deposited on the P-type semiconductor layer to a thickness of about 100 angstroms. The bell is then heat treated at a temperature of about 700 ° C. As a result, the current-voltage embodiment of the light-emitting device of the fourth embodiment is the same. In the fifth embodiment, the P-plastic semiconductor layer is divided into about 30 points. In the fifth embodiment of the present invention, the current distribution and transparency method is: forming a thickness of about 200 angstroms on the p-type semiconductor layer, Ni is formed at a thickness of about 300 Angstroms, and a layer of Cr is formed at a thickness of about 20 Å on the Ni layer. The difference from the first to fourth embodiments is that the final processing of forming 2 to 6 is not performed. The characteristics of the light-emitting device of the fifth embodiment are that the critical voltage is 3, the voltage is 5.6 V ', the resistance is 58 Ω, and the illuminance is 20 mcde. The surface quality of the exposed electrode is too thick, resulting in the state shown in FIG. This is because the transparent electrode intercepts the light emitted by the device, resulting in poor illumination. The light-emitting device of the present invention and the light-emitting device manufactured in accordance with the present invention have the following effects: 1. The present invention reduces the operating voltage of the device and increases the current. The area of the active semiconductor layer also expands the usable light emitting area. As a result, the illuminance of the p device increases. Light In addition, the present invention reduces the resistance of the device and therefore reduces the thermal output. ⑦ 王 及 功

P.17 4E ^^ Repair j £ / Correction / Supplement V. Description of the invention (15) Rate loss. As a result, the quality of the device gradually decreases, so the life and reliability of the device are improved. This short-wavelength light-emitting device can be used in natural-color LED displays, LED light guides, guidance information displays and telecommunications signals with low power consumption, so the present invention is very effective industrially. Although the light emitting device and the method of manufacturing the light emitting device in the present invention have been described in the preferred embodiments, those skilled in the art need to understand that the above embodiments can be modified and changed without departing from the spirit and perspective of the present invention.

Page 18 457730 "Year of the year" on the 4th of the month, amended / corrected. / Supplementary Schematic Description of the Schematic Description of the Schematic is attached to enable those skilled in the art to further understand the present invention, and forms a part of the specification to It is used to explain the principle of the present invention. In the drawings: FIGS. 1A to 1D are partial views of a process for manufacturing a conventional light-emitting device; FIGS. 2A to 2D are partial views of a process for manufacturing a light-emitting device according to the present invention; Current-voltage characteristics of the conventional technique; FIG. 4 shows a photo of the quality degradation of the current-dispersing transparent electrode of FIG. 2D; and FIG. 5 shows the hole carrier concentration measured by CV (capacitance voltage) measurement in the present invention and the conventional technique.

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Claims (1)

Wu Feng ... ， __ VI. Patent Application Scope 1. A method for manufacturing a light-emitting device, the method includes the following steps: First step: forming a semiconductor layer of a first conductivity type, an activation layer, and a second conductivity on a substrate, respectively. Type semiconductor layer; second step: removing a part of the second conductive type semiconductor layer, a specific region in the lower active layer, and the first conductive type semiconductor layer, and exposing the first A part of the semiconductor layer of the conductive type; the third step: forming a current-dispersing transparent electrode on the semiconductor layer of the second conductive type and performing heat treatment; and the fourth step: the exposed semiconductor of the first conductive type An electrode of a first conductivity type is formed on the layer, and a second conductivity type electrode is formed on the current-dispersing transparent electrode. 2. A method of manufacturing a light emitting device according to item 1 of the patent application, wherein the substrate comprises sapphire. 3. The method for manufacturing a light-emitting device according to item 1 of the patent application, wherein the semiconductor layer of the first conductivity type includes an η-type arsenide group III-V compound semiconductor and the semiconductor layer of the second conductivity type includes P-type arsenic Nitrogen. Three or five compound semiconductors. 4. The method for manufacturing a light-emitting device according to item 3 of the application, wherein the n-type arsenide III-V compound semiconductor and the p-type arsenide III-V compound semiconductor include GaN, GaAIN, InGaN, and InAlGaN. Of one. 5. The method for manufacturing a light-emitting device according to item 3 of the patent application, wherein the n-type arsenide III-V compound semiconductor is doped with Si, Ge, Se, S and Page 20 457 73 0 month / fe repair. ;;: .// correction / supplement-_ VI. One of the patent application scope Te, and the p-type nitrogen arsenide III-V compound semiconductor is doped with Be, Sr , Ba, Zn and Mg. 6. The method for manufacturing a light emitting device according to item 1 of the scope of patent application, wherein a semiconductor layer of a first conductive type having a thickness of about 1 to 50 vm is formed, and a second layer having a thickness of about 0.2 to 100 / zm is formed. A conductive type semiconductor layer. 7. The method for manufacturing a light-emitting device according to item 1 of the patent application scope, wherein the current-dispersing transparent electrode comprises a single metal selected from Ni, Pd, Cr, Ti, V, Zr, Ce, and Nd, or an alloy thereof, or Multiple layers of metal stacked from this metal. 8. The method of manufacturing a light-emitting device according to item 7 of the patent application, wherein the multilayer metal includes Pd and Ni. 9. The method of manufacturing a light-emitting device according to item 1 of the scope of patent application, wherein the heat treatment in the three steps is performed in a non-oxygen or inert gas atmosphere at a temperature of 400 to 100 ° C. 0 seconds to 3 hours. 10. The method for manufacturing a light-emitting device according to item 1 of the scope of patent application, wherein a current-dispersing transparent electrode having a thickness of about 10 to 100 angstroms is formed. 11. The method for manufacturing a light-emitting device according to item 1 of the patent application, wherein the first conductive type electrode comprises a single metal selected from Ti, Al, In, Ni, and Cr, or an alloy of these metals, or these Metal stack of multiple layers of metal. 1 2. The method for manufacturing a light-emitting device according to item 1 of the scope of patent application, wherein the second conductive type electrode comprises Cr, Ni, Al, In, Pt, Mo, P d, G e, S i, T i, W, Z r, Ta, Cu, P b, Ag, Sn, and Z n selected from a single metal, an alloy of some of these metals, or one of these metals Page 21, year 457730 (fid date is very low / continued / paved. _ 6. Multi-layer metal stacking of some metals for patent application. 1 3. If the method of manufacturing a light-emitting device in the first patent application scope, The fourth step further includes the following steps: forming a first conductive type electrode on the exposed semiconductor layer of the first conductive type and performing heat treatment; and forming a second conductive type electrode on the current-dispersing transparent electrode, and The heat treatment is performed. 4. The method of manufacturing a light emitting device according to item 3 of the patent application scope, wherein after forming the first conductive type electrode, the temperature is performed at a temperature of 500 to 900 ° C for 10 seconds to 30. Heat treatment in minutes. 1 5. The method for manufacturing a light-emitting device according to item 13 of the patent application scope, wherein after forming the second conductive type electrode, perform 30 at a temperature of 500 to 700 ° C. Heat treatment from seconds to 30 minutes. 16. A light-emitting device includes: a substrate; forming a first conductive type semiconductor layer on the substrate; forming activation on a specific region of the first conductive type semiconductor layer Forming a second conductive type semiconductor layer on the activation layer; forming a current dispersing transparent electrode on the second conductive type semiconductor layer; and forming two electrodes on the first conductive type semiconductor layer and the current dispersing transparent electrode, respectively 1 7. The light-emitting device according to item 16 of the patent application scope, wherein the substrate Page 22, 457730, year " month β said correction / correction / supplement VI. The scope of patent application is transparent sapphire substrate, and the first and second conductive type semiconductor layers include a group of compound semiconductors . 1 8. The light-emitting device according to item 16 of the patent application scope, wherein the current-dispersing transparent electrode comprises a single metal selected from Ni, Pd, Cr, Ti, V 'Zr, Ce, and Nd, or among these metals Several alloys, or multiple layers of these metals stacked. Page 23