JPS616197A - タングステン単結晶及びその製造方法 - Google Patents

タングステン単結晶及びその製造方法

Info

Publication number
JPS616197A
JPS616197A JP59126326A JP12632684A JPS616197A JP S616197 A JPS616197 A JP S616197A JP 59126326 A JP59126326 A JP 59126326A JP 12632684 A JP12632684 A JP 12632684A JP S616197 A JPS616197 A JP S616197A
Authority
JP
Japan
Prior art keywords
tungsten
single crystal
grain
metal powder
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59126326A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0351676B2 (da
Inventor
Tadayuki Fujii
藤井　忠行
Yutaka Hiraoka
平岡　裕
Ryoji Watanabe
渡辺　亮治
Kenichi Okamoto
謙一 岡本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Tungsten Co Ltd
National Research Institute for Metals
Original Assignee
Tokyo Tungsten Co Ltd
National Research Institute for Metals
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Tungsten Co Ltd, National Research Institute for Metals filed Critical Tokyo Tungsten Co Ltd
Priority to JP59126326A priority Critical patent/JPS616197A/ja
Publication of JPS616197A publication Critical patent/JPS616197A/ja
Publication of JPH0351676B2 publication Critical patent/JPH0351676B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP59126326A 1984-06-21 1984-06-21 タングステン単結晶及びその製造方法 Granted JPS616197A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59126326A JPS616197A (ja) 1984-06-21 1984-06-21 タングステン単結晶及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59126326A JPS616197A (ja) 1984-06-21 1984-06-21 タングステン単結晶及びその製造方法

Publications (2)

Publication Number Publication Date
JPS616197A true JPS616197A (ja) 1986-01-11
JPH0351676B2 JPH0351676B2 (da) 1991-08-07

Family

ID=14932415

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59126326A Granted JPS616197A (ja) 1984-06-21 1984-06-21 タングステン単結晶及びその製造方法

Country Status (1)

Country Link
JP (1) JPS616197A (da)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5916363A (en) * 1996-07-08 1999-06-29 National Research Institute For Metals Oriented molybdenum or tungsten single crystal and manufacturing method thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS582289A (ja) * 1981-06-30 1983-01-07 Matsushita Electric Ind Co Ltd 単結晶体の製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS582289A (ja) * 1981-06-30 1983-01-07 Matsushita Electric Ind Co Ltd 単結晶体の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5916363A (en) * 1996-07-08 1999-06-29 National Research Institute For Metals Oriented molybdenum or tungsten single crystal and manufacturing method thereof

Also Published As

Publication number Publication date
JPH0351676B2 (da) 1991-08-07

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term