JPS6156617B2 - - Google Patents
Info
- Publication number
- JPS6156617B2 JPS6156617B2 JP3886277A JP3886277A JPS6156617B2 JP S6156617 B2 JPS6156617 B2 JP S6156617B2 JP 3886277 A JP3886277 A JP 3886277A JP 3886277 A JP3886277 A JP 3886277A JP S6156617 B2 JPS6156617 B2 JP S6156617B2
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- groove
- mesa
- photoresist film
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 19
- 229920002120 photoresistant polymer Polymers 0.000 claims description 18
- 239000008188 pellet Substances 0.000 claims description 9
- 238000005520 cutting process Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910000831 Steel Inorganic materials 0.000 description 4
- 238000003486 chemical etching Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000010959 steel Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000002779 inactivation Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Weting (AREA)
- Formation Of Insulating Films (AREA)
- Dicing (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3886277A JPS53123657A (en) | 1977-04-04 | 1977-04-04 | Production of semiconductor unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3886277A JPS53123657A (en) | 1977-04-04 | 1977-04-04 | Production of semiconductor unit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS53123657A JPS53123657A (en) | 1978-10-28 |
| JPS6156617B2 true JPS6156617B2 (zh) | 1986-12-03 |
Family
ID=12537004
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3886277A Granted JPS53123657A (en) | 1977-04-04 | 1977-04-04 | Production of semiconductor unit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS53123657A (zh) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5762536A (en) * | 1980-10-01 | 1982-04-15 | Nec Corp | Manufacture of semiconductor device |
| KR940016546A (ko) * | 1992-12-23 | 1994-07-23 | 프레데릭 얀 스미트 | 반도체 장치 및 제조방법 |
| JP4590174B2 (ja) * | 2003-09-11 | 2010-12-01 | 株式会社ディスコ | ウエーハの加工方法 |
| JP2006203251A (ja) * | 2004-10-07 | 2006-08-03 | Showa Denko Kk | 半導体素子の製造方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4852374A (zh) * | 1971-11-02 | 1973-07-23 | ||
| JPS49122278A (zh) * | 1973-03-22 | 1974-11-22 | ||
| JPS5629383A (en) * | 1979-08-17 | 1981-03-24 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of tunnel-junction type josephson element |
-
1977
- 1977-04-04 JP JP3886277A patent/JPS53123657A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4852374A (zh) * | 1971-11-02 | 1973-07-23 | ||
| JPS49122278A (zh) * | 1973-03-22 | 1974-11-22 | ||
| JPS5629383A (en) * | 1979-08-17 | 1981-03-24 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of tunnel-junction type josephson element |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS53123657A (en) | 1978-10-28 |
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