JPS6156609B2 - - Google Patents
Info
- Publication number
- JPS6156609B2 JPS6156609B2 JP24197883A JP24197883A JPS6156609B2 JP S6156609 B2 JPS6156609 B2 JP S6156609B2 JP 24197883 A JP24197883 A JP 24197883A JP 24197883 A JP24197883 A JP 24197883A JP S6156609 B2 JPS6156609 B2 JP S6156609B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- container
- electrode
- processing
- bell gear
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000012545 processing Methods 0.000 claims description 16
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 15
- 239000007789 gas Substances 0.000 claims description 13
- 239000010409 thin film Substances 0.000 claims description 7
- 239000012495 reaction gas Substances 0.000 claims description 6
- 235000012431 wafers Nutrition 0.000 description 40
- 230000000630 rising effect Effects 0.000 description 8
- 239000010408 film Substances 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 238000012993 chemical processing Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24197883A JPS59145519A (ja) | 1983-12-23 | 1983-12-23 | プラズマcvd装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24197883A JPS59145519A (ja) | 1983-12-23 | 1983-12-23 | プラズマcvd装置 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11336277A Division JPS5447576A (en) | 1977-09-22 | 1977-09-22 | Plasma cvd apparatus |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59145519A JPS59145519A (ja) | 1984-08-21 |
JPS6156609B2 true JPS6156609B2 (enrdf_load_stackoverflow) | 1986-12-03 |
Family
ID=17082417
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP24197883A Granted JPS59145519A (ja) | 1983-12-23 | 1983-12-23 | プラズマcvd装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59145519A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9701221B2 (en) | 2013-03-21 | 2017-07-11 | Toyota Boshoku Kabushiki Kaisha | Vehicle seat |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6384937U (enrdf_load_stackoverflow) * | 1986-11-21 | 1988-06-03 | ||
US4886570A (en) * | 1987-07-16 | 1989-12-12 | Texas Instruments Incorporated | Processing apparatus and method |
US6776848B2 (en) | 2002-01-17 | 2004-08-17 | Applied Materials, Inc. | Motorized chamber lid |
JP6459578B2 (ja) * | 2015-02-06 | 2019-01-30 | ウシオ電機株式会社 | 光処理装置および光処理方法 |
-
1983
- 1983-12-23 JP JP24197883A patent/JPS59145519A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9701221B2 (en) | 2013-03-21 | 2017-07-11 | Toyota Boshoku Kabushiki Kaisha | Vehicle seat |
Also Published As
Publication number | Publication date |
---|---|
JPS59145519A (ja) | 1984-08-21 |
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