JPS6156599B2 - - Google Patents
Info
- Publication number
- JPS6156599B2 JPS6156599B2 JP56199475A JP19947581A JPS6156599B2 JP S6156599 B2 JPS6156599 B2 JP S6156599B2 JP 56199475 A JP56199475 A JP 56199475A JP 19947581 A JP19947581 A JP 19947581A JP S6156599 B2 JPS6156599 B2 JP S6156599B2
- Authority
- JP
- Japan
- Prior art keywords
- field effect
- transistor
- transistors
- effect transistors
- junction gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 claims description 16
- 238000010586 diagram Methods 0.000 description 2
- 230000010365 information processing Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56199475A JPS58102391A (ja) | 1981-12-12 | 1981-12-12 | シヨツトキ接合ゲ−ト型電界効果トランジスタを用いた記憶回路 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56199475A JPS58102391A (ja) | 1981-12-12 | 1981-12-12 | シヨツトキ接合ゲ−ト型電界効果トランジスタを用いた記憶回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58102391A JPS58102391A (ja) | 1983-06-17 |
JPS6156599B2 true JPS6156599B2 (enrdf_load_stackoverflow) | 1986-12-03 |
Family
ID=16408410
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56199475A Granted JPS58102391A (ja) | 1981-12-12 | 1981-12-12 | シヨツトキ接合ゲ−ト型電界効果トランジスタを用いた記憶回路 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58102391A (enrdf_load_stackoverflow) |
-
1981
- 1981-12-12 JP JP56199475A patent/JPS58102391A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS58102391A (ja) | 1983-06-17 |
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