JPS58102391A - シヨツトキ接合ゲ−ト型電界効果トランジスタを用いた記憶回路 - Google Patents
シヨツトキ接合ゲ−ト型電界効果トランジスタを用いた記憶回路Info
- Publication number
- JPS58102391A JPS58102391A JP56199475A JP19947581A JPS58102391A JP S58102391 A JPS58102391 A JP S58102391A JP 56199475 A JP56199475 A JP 56199475A JP 19947581 A JP19947581 A JP 19947581A JP S58102391 A JPS58102391 A JP S58102391A
- Authority
- JP
- Japan
- Prior art keywords
- fets
- field effect
- transistors
- junction gate
- read
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005669 field effect Effects 0.000 title claims description 15
- 238000010586 diagram Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56199475A JPS58102391A (ja) | 1981-12-12 | 1981-12-12 | シヨツトキ接合ゲ−ト型電界効果トランジスタを用いた記憶回路 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56199475A JPS58102391A (ja) | 1981-12-12 | 1981-12-12 | シヨツトキ接合ゲ−ト型電界効果トランジスタを用いた記憶回路 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58102391A true JPS58102391A (ja) | 1983-06-17 |
| JPS6156599B2 JPS6156599B2 (enrdf_load_stackoverflow) | 1986-12-03 |
Family
ID=16408410
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56199475A Granted JPS58102391A (ja) | 1981-12-12 | 1981-12-12 | シヨツトキ接合ゲ−ト型電界効果トランジスタを用いた記憶回路 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58102391A (enrdf_load_stackoverflow) |
-
1981
- 1981-12-12 JP JP56199475A patent/JPS58102391A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6156599B2 (enrdf_load_stackoverflow) | 1986-12-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101196167B1 (ko) | 선충전 회로를 갖춘 ｍｒａｍ 센스 증폭기 및 센싱 방법 | |
| CA2087023A1 (en) | Bit storage cell | |
| JPH02201797A (ja) | 半導体メモリ装置 | |
| JPS6322395B2 (enrdf_load_stackoverflow) | ||
| JPH0241115B2 (enrdf_load_stackoverflow) | ||
| US4107556A (en) | Sense circuit employing complementary field effect transistors | |
| JPH06132747A (ja) | 半導体装置 | |
| JPS5855597B2 (ja) | 双安定半導体メモリセル | |
| JPS58102391A (ja) | シヨツトキ接合ゲ−ト型電界効果トランジスタを用いた記憶回路 | |
| JPS6196587A (ja) | センスアンプ回路 | |
| JPS5813519Y2 (ja) | 半導体記憶装置 | |
| JP3609260B2 (ja) | 半導体装置の増幅回路 | |
| TW202403732A (zh) | 低功率靜態隨機存取記憶體 | |
| JPS61284896A (ja) | 不揮発性プログラマブル・スタチツク・メモリ・セル | |
| US4354151A (en) | Voltage divider circuits | |
| JPS6260190A (ja) | 半導体記憶装置 | |
| US6590812B2 (en) | Memory cells incorporating a buffer circuit and memory comprising such a memory cell | |
| JPH0212694A (ja) | 半導体記憶装置 | |
| JP7637772B2 (ja) | 受信回路及びメモリ | |
| JPS6215955B2 (enrdf_load_stackoverflow) | ||
| JPS638555B2 (enrdf_load_stackoverflow) | ||
| JP2539593B2 (ja) | 半導体メモリ回路 | |
| JPH0256799A (ja) | メモリ回路 | |
| JPS62121987A (ja) | メモリ−回路 | |
| KR940002860B1 (ko) | 램 리드/라이트 회로 |