JPS6156448A - 相補型半導体装置の製造方法 - Google Patents

相補型半導体装置の製造方法

Info

Publication number
JPS6156448A
JPS6156448A JP59178651A JP17865184A JPS6156448A JP S6156448 A JPS6156448 A JP S6156448A JP 59178651 A JP59178651 A JP 59178651A JP 17865184 A JP17865184 A JP 17865184A JP S6156448 A JPS6156448 A JP S6156448A
Authority
JP
Japan
Prior art keywords
film
conductivity type
impurity
selectively
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59178651A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0584064B2 (OSRAM
Inventor
Satoru Maeda
哲 前田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP59178651A priority Critical patent/JPS6156448A/ja
Priority to EP85110792A priority patent/EP0173953B1/en
Priority to US06/770,179 priority patent/US4642878A/en
Priority to DE8585110792T priority patent/DE3583472D1/de
Publication of JPS6156448A publication Critical patent/JPS6156448A/ja
Publication of JPH0584064B2 publication Critical patent/JPH0584064B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
JP59178651A 1984-08-28 1984-08-28 相補型半導体装置の製造方法 Granted JPS6156448A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP59178651A JPS6156448A (ja) 1984-08-28 1984-08-28 相補型半導体装置の製造方法
EP85110792A EP0173953B1 (en) 1984-08-28 1985-08-28 Method for manufacturing a semiconductor device having a gate electrode
US06/770,179 US4642878A (en) 1984-08-28 1985-08-28 Method of making MOS device by sequentially depositing an oxidizable layer and a masking second layer over gated device regions
DE8585110792T DE3583472D1 (de) 1984-08-28 1985-08-28 Verfahren zum herstellen einer halbleiteranordnung mit gateelektrode.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59178651A JPS6156448A (ja) 1984-08-28 1984-08-28 相補型半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6156448A true JPS6156448A (ja) 1986-03-22
JPH0584064B2 JPH0584064B2 (OSRAM) 1993-11-30

Family

ID=16052187

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59178651A Granted JPS6156448A (ja) 1984-08-28 1984-08-28 相補型半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6156448A (OSRAM)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63252461A (ja) * 1987-04-09 1988-10-19 Nec Corp Ｃｍｏｓ型半導体装置の製造方法
JPH023242A (ja) * 1988-06-17 1990-01-08 Sanyo Electric Co Ltd 半導体装置の製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4883077B2 (ja) * 2008-12-17 2012-02-22 株式会社デンソー 半導体装置およびその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63252461A (ja) * 1987-04-09 1988-10-19 Nec Corp Ｃｍｏｓ型半導体装置の製造方法
JPH023242A (ja) * 1988-06-17 1990-01-08 Sanyo Electric Co Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
JPH0584064B2 (OSRAM) 1993-11-30

Similar Documents

Publication Publication Date Title
US4642878A (en) Method of making MOS device by sequentially depositing an oxidizable layer and a masking second layer over gated device regions
EP0067206B1 (en) Method for fabricating complementary semiconductor devices
JP3031855B2 (ja) 半導体装置の製造方法
JPH0426542B2 (OSRAM)
EP0369336A2 (en) Process for fabricating bipolar and CMOS transistors on a common substrate
US4939154A (en) Method of fabricating an insulated gate semiconductor device having a self-aligned gate
JPH0348459A (ja) 半導体装置及びその製造方法
KR930005508B1 (ko) 반도체장치 및 그 제조방법
JPH098135A (ja) 半導体装置の製造方法
JPS6251216A (ja) 半導体装置の製造方法
JPS6156448A (ja) 相補型半導体装置の製造方法
KR0170436B1 (ko) 모스트랜지스터 제조방법
JPS61154172A (ja) 半導体装置の製造方法
JPH09139382A (ja) 半導体装置の製造方法
JPS63275181A (ja) 半導体装置の製造方法
JP3521921B2 (ja) 半導体装置の製造方法
JPS6039868A (ja) 半導体装置の製造方法
KR940000986B1 (ko) 스택형 cmos 제조방법
JPS6016469A (ja) Ｍｉｓ半導体装置の製法
JPH0230145A (ja) 半導体装置の製造方法
JPH1126756A (ja) 半導体装置の製造方法
JPH0621373A (ja) 半導体装置の製造方法
JPH0527995B2 (OSRAM)
JPH07122741A (ja) 半導体装置の製造方法
JPS61251164A (ja) Ｂｉ−ＭＩＳ集積回路の製造方法