JPS6155249B2 - - Google Patents

Info

Publication number
JPS6155249B2
JPS6155249B2 JP56034622A JP3462281A JPS6155249B2 JP S6155249 B2 JPS6155249 B2 JP S6155249B2 JP 56034622 A JP56034622 A JP 56034622A JP 3462281 A JP3462281 A JP 3462281A JP S6155249 B2 JPS6155249 B2 JP S6155249B2
Authority
JP
Japan
Prior art keywords
single crystal
porous
layer
semiconductor layer
silicon layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56034622A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57149749A (en
Inventor
Tetsushi Sakai
Nobunori Konaka
Hiroki Yamauchi
Michiharu Tanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP56034622A priority Critical patent/JPS57149749A/ja
Publication of JPS57149749A publication Critical patent/JPS57149749A/ja
Publication of JPS6155249B2 publication Critical patent/JPS6155249B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/764—Air gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76289—Lateral isolation by air gap

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
JP56034622A 1981-03-12 1981-03-12 Semiconductor device and its manufacture Granted JPS57149749A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56034622A JPS57149749A (en) 1981-03-12 1981-03-12 Semiconductor device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56034622A JPS57149749A (en) 1981-03-12 1981-03-12 Semiconductor device and its manufacture

Publications (2)

Publication Number Publication Date
JPS57149749A JPS57149749A (en) 1982-09-16
JPS6155249B2 true JPS6155249B2 (cg-RX-API-DMAC7.html) 1986-11-27

Family

ID=12419480

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56034622A Granted JPS57149749A (en) 1981-03-12 1981-03-12 Semiconductor device and its manufacture

Country Status (1)

Country Link
JP (1) JPS57149749A (cg-RX-API-DMAC7.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4628591A (en) * 1984-10-31 1986-12-16 Texas Instruments Incorporated Method for obtaining full oxide isolation of epitaxial islands in silicon utilizing selective oxidation of porous silicon
US5057022A (en) * 1989-03-20 1991-10-15 Miller Robert O Method of making a silicon integrated circuit waveguide
US4927781A (en) * 1989-03-20 1990-05-22 Miller Robert O Method of making a silicon integrated circuit waveguide
DE69331816T2 (de) * 1992-01-31 2002-08-29 Canon K.K., Tokio/Tokyo Verfahren zur Herstellung eines Halbleitersubstrats

Also Published As

Publication number Publication date
JPS57149749A (en) 1982-09-16

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