JPS6154650A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS6154650A
JPS6154650A JP59176913A JP17691384A JPS6154650A JP S6154650 A JPS6154650 A JP S6154650A JP 59176913 A JP59176913 A JP 59176913A JP 17691384 A JP17691384 A JP 17691384A JP S6154650 A JPS6154650 A JP S6154650A
Authority
JP
Japan
Prior art keywords
film
point metal
melting point
ti2si3
high melting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59176913A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0377661B2 (en:Method
Inventor
Masahiro Shimizu
雅裕 清水
Tatsuro Okamoto
岡本　龍郎
Katsuhiro Tsukamoto
塚本　克博
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP59176913A priority Critical patent/JPS6154650A/ja
Publication of JPS6154650A publication Critical patent/JPS6154650A/ja
Publication of JPH0377661B2 publication Critical patent/JPH0377661B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/6316—

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP59176913A 1984-08-24 1984-08-24 半導体装置の製造方法 Granted JPS6154650A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59176913A JPS6154650A (ja) 1984-08-24 1984-08-24 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59176913A JPS6154650A (ja) 1984-08-24 1984-08-24 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6154650A true JPS6154650A (ja) 1986-03-18
JPH0377661B2 JPH0377661B2 (en:Method) 1991-12-11

Family

ID=16021947

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59176913A Granted JPS6154650A (ja) 1984-08-24 1984-08-24 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6154650A (en:Method)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62257749A (ja) * 1985-05-01 1987-11-10 テキサス　インスツルメンツ　インコ−ポレイテツド 集積回路とその製法
JPS649642A (en) * 1987-07-02 1989-01-12 Fujitsu Ltd Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62257749A (ja) * 1985-05-01 1987-11-10 テキサス　インスツルメンツ　インコ−ポレイテツド 集積回路とその製法
JPS649642A (en) * 1987-07-02 1989-01-12 Fujitsu Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPH0377661B2 (en:Method) 1991-12-11

Similar Documents

Publication Publication Date Title
JPH0736403B2 (ja) 耐火金属の付着方法
JPS61183942A (ja) 半導体装置の製造方法
US4708904A (en) Semiconductor device and a method of manufacturing the same
JP2809087B2 (ja) 配線形成方法
US6136691A (en) In situ plasma clean for tungsten etching back
JPS6154650A (ja) 半導体装置の製造方法
JPS59175726A (ja) 半導体装置の製造方法
JPS584975A (ja) 半導体装置の製造方法
JP2930102B2 (ja) 半導体装置用配線構造及びその製造方法
JPS6312152A (ja) 半導体装置およびその製造方法
JPS6154648A (ja) 半導体装置の製造方法
JP3168400B2 (ja) 半導体装置および半導体装置の製造方法
KR20040001861A (ko) 금속게이트전극 및 그 제조 방법
KR100443363B1 (ko) 반도체 소자의 금속배선 형성방법
JPS6151941A (ja) 電極・配線膜の製造方法
JP2518100B2 (ja) 半導体装置の製造方法
JPS6154649A (ja) 半導体装置の製造方法
KR100317338B1 (ko) 반도체 소자 제조 방법
JPH0232537A (ja) 半導体装置の製造方法
JPH041497B2 (en:Method)
JPS6350042A (ja) 多層配線・電極膜構造
JPH02186634A (ja) 集積回路装置の製造方法
JPS6294937A (ja) 半導体集積回路装置の製造方法
JPS6115349A (ja) 半導体素子の配線形成方法
JPS62291146A (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term