JPS6154314B2 - - Google Patents
Info
- Publication number
- JPS6154314B2 JPS6154314B2 JP53034035A JP3403578A JPS6154314B2 JP S6154314 B2 JPS6154314 B2 JP S6154314B2 JP 53034035 A JP53034035 A JP 53034035A JP 3403578 A JP3403578 A JP 3403578A JP S6154314 B2 JPS6154314 B2 JP S6154314B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- channel
- doped
- layers
- image
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 238000001514 detection method Methods 0.000 claims 1
- 230000005855 radiation Effects 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 239000000969 carrier Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 239000003086 colorant Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 206010034972 Photosensitivity reaction Diseases 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000036211 photosensitivity Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 238000001429 visible spectrum Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 238000005421 electrostatic potential Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1062—Channel region of field-effect devices of charge coupled devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14868—CCD or CID colour imagers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/80—Camera processing pipelines; Components thereof
- H04N23/84—Camera processing pipelines; Components thereof for processing colour signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
- H01L27/14843—Interline transfer
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US78094477A | 1977-03-24 | 1977-03-24 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS53118932A JPS53118932A (en) | 1978-10-17 |
| JPS6154314B2 true JPS6154314B2 (fr) | 1986-11-21 |
Family
ID=25121164
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3403578A Granted JPS53118932A (en) | 1977-03-24 | 1978-03-24 | Device for detecting color image |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS53118932A (fr) |
| CA (1) | CA1107379A (fr) |
| DE (1) | DE2811961B2 (fr) |
| FR (1) | FR2385219A1 (fr) |
| GB (1) | GB1597740A (fr) |
| HK (1) | HK5682A (fr) |
| NL (1) | NL7803196A (fr) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0644842B2 (ja) * | 1987-06-02 | 1994-06-15 | 日本甜菜製糖株式会社 | 移植機の苗補給方法及び装置 |
| JP2502747Y2 (ja) * | 1989-08-31 | 1996-06-26 | ヤンマー農機株式会社 | 歩行型移植機 |
| US11478578B2 (en) | 2012-06-08 | 2022-10-25 | Fresenius Medical Care Holdings, Inc. | Medical fluid cassettes and related systems and methods |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4214264A (en) * | 1979-02-28 | 1980-07-22 | Eastman Kodak Company | Hybrid color image sensing array |
| DE3124716A1 (de) * | 1981-06-24 | 1983-05-19 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | "anordnung zur mehrspektralen abbildung von objekten, vorzugsweise von zielen" |
| JPS5916483A (ja) * | 1982-07-19 | 1984-01-27 | Matsushita Electric Ind Co Ltd | 固体撮像装置 |
| US4533940A (en) * | 1983-06-13 | 1985-08-06 | Chappell Barbara A | High spatial resolution energy discriminator |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3906544A (en) * | 1971-07-14 | 1975-09-16 | Gen Electric | Semiconductor imaging detector device |
| DE2313254A1 (de) * | 1972-03-17 | 1973-09-27 | Matsushita Electric Ind Co Ltd | Photoelektrisches umsetzungselement fuer farbbildaufnahme- bzw. -abtastroehren und verfahren zu dessen herstellung |
| DE2247966A1 (de) * | 1972-09-29 | 1974-04-11 | Heinz Prof Dr Rer Nat Beneking | Halbleiteranordnung zum nachweis von lichtstrahlen |
| US3985449A (en) * | 1975-02-07 | 1976-10-12 | International Business Machines Corporation | Semiconductor color detector |
-
1978
- 1978-03-10 CA CA298,693A patent/CA1107379A/fr not_active Expired
- 1978-03-18 DE DE2811961A patent/DE2811961B2/de active Granted
- 1978-03-23 GB GB11717/78A patent/GB1597740A/en not_active Expired
- 1978-03-23 NL NL7803196A patent/NL7803196A/xx not_active Application Discontinuation
- 1978-03-24 FR FR7808621A patent/FR2385219A1/fr active Granted
- 1978-03-24 JP JP3403578A patent/JPS53118932A/ja active Granted
-
1982
- 1982-02-11 HK HK56/82A patent/HK5682A/xx unknown
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0644842B2 (ja) * | 1987-06-02 | 1994-06-15 | 日本甜菜製糖株式会社 | 移植機の苗補給方法及び装置 |
| JP2502747Y2 (ja) * | 1989-08-31 | 1996-06-26 | ヤンマー農機株式会社 | 歩行型移植機 |
| US11478578B2 (en) | 2012-06-08 | 2022-10-25 | Fresenius Medical Care Holdings, Inc. | Medical fluid cassettes and related systems and methods |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2385219B1 (fr) | 1981-10-30 |
| CA1107379A (fr) | 1981-08-18 |
| FR2385219A1 (fr) | 1978-10-20 |
| HK5682A (en) | 1982-02-19 |
| NL7803196A (nl) | 1978-09-26 |
| DE2811961B2 (de) | 1979-12-20 |
| DE2811961A1 (de) | 1978-09-28 |
| JPS53118932A (en) | 1978-10-17 |
| GB1597740A (en) | 1981-09-09 |
| DE2811961C3 (fr) | 1987-01-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4613895A (en) | Color responsive imaging device employing wavelength dependent semiconductor optical absorption | |
| US6841816B2 (en) | Vertical color filter sensor group with non-sensor filter and method for fabricating such a sensor group | |
| US7166880B2 (en) | Vertical color filter sensor group with carrier-collection elements of different size and method for fabricating such a sensor group | |
| EP0015711B1 (fr) | Analyse d'image en couleurs | |
| JPH09266296A (ja) | 固体撮像装置 | |
| JP3049015B2 (ja) | バンドギャップ設計型アクティブ・ピクセル・セル | |
| WO1991014284A1 (fr) | Dispositif a couplage de charge a jonctions de schottky | |
| JPS6154314B2 (fr) | ||
| JPS61133660A (ja) | 固体イメ−ジセンサ | |
| CN100573907C (zh) | 垂直滤色片传感器组及其制造所用的半导体集成电路制造方法 | |
| JPS61139061A (ja) | 半導体光検出装置 | |
| CN100505321C (zh) | 含非晶硅半导体的垂直滤色片传感器组及其制造方法 | |
| CN1943041B (zh) | 垂直的滤色片传感器组 | |
| JPH0680811B2 (ja) | Ｃｃｄ画像感知器 | |
| JPH0416948B2 (fr) | ||
| US4385307A (en) | Solid state image sensing device for enhanced charge carrier accumulation | |
| JP5030323B2 (ja) | 固体撮像素子 | |
| US5066994A (en) | Image sensor | |
| JPS60182764A (ja) | 半導体受光装置 | |
| IE50956B1 (en) | Charge-coupled image sensor device and method of manufacturing the same | |
| JPH07105522B2 (ja) | 半導体装置 | |
| KR100258974B1 (ko) | 전하결합형 이미지 센서의 제조방법 | |
| JPH08130324A (ja) | 高耐圧プレーナ型受光素子 | |
| KR950010532B1 (ko) | Ccd의 구조 | |
| JPS61285760A (ja) | 光電変換装置 |