FR2385219B1 - - Google Patents

Info

Publication number
FR2385219B1
FR2385219B1 FR7808621A FR7808621A FR2385219B1 FR 2385219 B1 FR2385219 B1 FR 2385219B1 FR 7808621 A FR7808621 A FR 7808621A FR 7808621 A FR7808621 A FR 7808621A FR 2385219 B1 FR2385219 B1 FR 2385219B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7808621A
Other versions
FR2385219A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eastman Kodak Co
Original Assignee
Eastman Kodak Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Publication of FR2385219A1 publication Critical patent/FR2385219A1/fr
Application granted granted Critical
Publication of FR2385219B1 publication Critical patent/FR2385219B1/fr
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025Channel region of field-effect devices
    • H01L29/1062Channel region of field-effect devices of charge coupled devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/148Charge coupled imagers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/148Charge coupled imagers
    • H01L27/14806Structural or functional details thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/148Charge coupled imagers
    • H01L27/14868CCD or CID colour imagers
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/80Camera processing pipelines; Components thereof
    • H04N23/84Camera processing pipelines; Components thereof for processing colour signals
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/148Charge coupled imagers
    • H01L27/14831Area CCD imagers
    • H01L27/14843Interline transfer
FR7808621A 1977-03-24 1978-03-24 Cible d'analyse d'image en couleurs Granted FR2385219A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US78094477A 1977-03-24 1977-03-24

Publications (2)

Publication Number Publication Date
FR2385219A1 FR2385219A1 (fr) 1978-10-20
FR2385219B1 true FR2385219B1 (fr) 1981-10-30

Family

ID=25121164

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7808621A Granted FR2385219A1 (fr) 1977-03-24 1978-03-24 Cible d'analyse d'image en couleurs

Country Status (7)

Country Link
JP (1) JPS53118932A (fr)
CA (1) CA1107379A (fr)
DE (1) DE2811961B2 (fr)
FR (1) FR2385219A1 (fr)
GB (1) GB1597740A (fr)
HK (1) HK5682A (fr)
NL (1) NL7803196A (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4214264A (en) * 1979-02-28 1980-07-22 Eastman Kodak Company Hybrid color image sensing array
DE3124716A1 (de) * 1981-06-24 1983-05-19 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt "anordnung zur mehrspektralen abbildung von objekten, vorzugsweise von zielen"
JPS5916483A (ja) * 1982-07-19 1984-01-27 Matsushita Electric Ind Co Ltd 固体撮像装置
US4533940A (en) * 1983-06-13 1985-08-06 Chappell Barbara A High spatial resolution energy discriminator
JPH0644842B2 (ja) * 1987-06-02 1994-06-15 日本甜菜製糖株式会社 移植機の苗補給方法及び装置
JP2502747Y2 (ja) * 1989-08-31 1996-06-26 ヤンマー農機株式会社 歩行型移植機
US9610392B2 (en) 2012-06-08 2017-04-04 Fresenius Medical Care Holdings, Inc. Medical fluid cassettes and related systems and methods

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3906544A (en) * 1971-07-14 1975-09-16 Gen Electric Semiconductor imaging detector device
DE2313254A1 (de) * 1972-03-17 1973-09-27 Matsushita Electric Ind Co Ltd Photoelektrisches umsetzungselement fuer farbbildaufnahme- bzw. -abtastroehren und verfahren zu dessen herstellung
DE2247966A1 (de) * 1972-09-29 1974-04-11 Heinz Prof Dr Rer Nat Beneking Halbleiteranordnung zum nachweis von lichtstrahlen
US3985449A (en) * 1975-02-07 1976-10-12 International Business Machines Corporation Semiconductor color detector

Also Published As

Publication number Publication date
CA1107379A (fr) 1981-08-18
FR2385219A1 (fr) 1978-10-20
HK5682A (en) 1982-02-19
NL7803196A (nl) 1978-09-26
DE2811961B2 (de) 1979-12-20
DE2811961A1 (de) 1978-09-28
JPS6154314B2 (fr) 1986-11-21
JPS53118932A (en) 1978-10-17
GB1597740A (en) 1981-09-09
DE2811961C3 (fr) 1987-01-22

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Legal Events

Date Code Title Description
ST Notification of lapse