JPS6154268B2 - - Google Patents

Info

Publication number
JPS6154268B2
JPS6154268B2 JP16601479A JP16601479A JPS6154268B2 JP S6154268 B2 JPS6154268 B2 JP S6154268B2 JP 16601479 A JP16601479 A JP 16601479A JP 16601479 A JP16601479 A JP 16601479A JP S6154268 B2 JPS6154268 B2 JP S6154268B2
Authority
JP
Japan
Prior art keywords
etching
diaphragm
semiconductor substrate
thickness
diffusion regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP16601479A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5688372A (en
Inventor
Yutaka Mihashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP16601479A priority Critical patent/JPS5688372A/ja
Publication of JPS5688372A publication Critical patent/JPS5688372A/ja
Publication of JPS6154268B2 publication Critical patent/JPS6154268B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Pressure Sensors (AREA)
JP16601479A 1979-12-19 1979-12-19 Manufacture of semiconductor diaphragm Granted JPS5688372A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16601479A JPS5688372A (en) 1979-12-19 1979-12-19 Manufacture of semiconductor diaphragm

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16601479A JPS5688372A (en) 1979-12-19 1979-12-19 Manufacture of semiconductor diaphragm

Publications (2)

Publication Number Publication Date
JPS5688372A JPS5688372A (en) 1981-07-17
JPS6154268B2 true JPS6154268B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1986-11-21

Family

ID=15823297

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16601479A Granted JPS5688372A (en) 1979-12-19 1979-12-19 Manufacture of semiconductor diaphragm

Country Status (1)

Country Link
JP (1) JPS5688372A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Also Published As

Publication number Publication date
JPS5688372A (en) 1981-07-17

Similar Documents

Publication Publication Date Title
US3994009A (en) Stress sensor diaphragms over recessed substrates
JPS6197572A (ja) 半導体加速度センサの製造方法
JPS60158675A (ja) ダイヤフラムセンサ
JPS6130038A (ja) エツチングの方法
JPS59136977A (ja) 圧力感知半導体装置とその製造法
US4131524A (en) Manufacture of semiconductor devices
JPH10335305A (ja) 半導体装置の製造方法
JPS6154268B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP3508547B2 (ja) Ｓｉウエハのエッチング方法
JPH0527971B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
US3512054A (en) Semiconductive transducer
JPS62172731A (ja) エツチング方法
JPH0230188A (ja) 半導体圧力センサの製造方法
JPS62183189A (ja) 半導体圧力変換器の製造方法
JPH0510830B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS63292071A (ja) 半導体加速度センサの製造方法
JPH0645617A (ja) 単結晶薄膜部材の製造方法
JPS62266876A (ja) 半導体圧力センサ
JPH0337749B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS60211945A (ja) 薄膜形成の方法
JP3531519B2 (ja) シリコンウエハのエッチング方法
JPS6356962A (ja) 半導体圧力変換器の製造方法
JP2671392B2 (ja) 半導体装置の製造方法
JPS61116879A (ja) 半導体圧力変換素子起わい部の形成方法
JPH06260660A (ja) 半導体歪みセンサ