JPS6152980B2 - - Google Patents
Info
- Publication number
- JPS6152980B2 JPS6152980B2 JP13048280A JP13048280A JPS6152980B2 JP S6152980 B2 JPS6152980 B2 JP S6152980B2 JP 13048280 A JP13048280 A JP 13048280A JP 13048280 A JP13048280 A JP 13048280A JP S6152980 B2 JPS6152980 B2 JP S6152980B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- region
- cvd
- oxidation
- element region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 37
- 230000003647 oxidation Effects 0.000 claims description 21
- 238000007254 oxidation reaction Methods 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 21
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 239000001301 oxygen Substances 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 5
- -1 oxygen ions Chemical class 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 17
- 229910052710 silicon Inorganic materials 0.000 description 17
- 239000010703 silicon Substances 0.000 description 17
- 229910052594 sapphire Inorganic materials 0.000 description 14
- 239000010980 sapphire Substances 0.000 description 14
- 229910004298 SiO 2 Inorganic materials 0.000 description 11
- 238000000034 method Methods 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 6
- 230000001590 oxidative effect Effects 0.000 description 6
- 241000293849 Cordylanthus Species 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 210000003323 beak Anatomy 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000000386 microscopy Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13048280A JPS5754342A (ja) | 1980-09-19 | 1980-09-19 | Handotaisochinoseizohoho |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13048280A JPS5754342A (ja) | 1980-09-19 | 1980-09-19 | Handotaisochinoseizohoho |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5754342A JPS5754342A (ja) | 1982-03-31 |
| JPS6152980B2 true JPS6152980B2 (enrdf_load_stackoverflow) | 1986-11-15 |
Family
ID=15035303
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13048280A Granted JPS5754342A (ja) | 1980-09-19 | 1980-09-19 | Handotaisochinoseizohoho |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5754342A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58175842A (ja) * | 1982-04-08 | 1983-10-15 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
| EP0764980A1 (en) * | 1995-09-20 | 1997-03-26 | Lucent Technologies Inc. | Improved local oxidation of silicon |
-
1980
- 1980-09-19 JP JP13048280A patent/JPS5754342A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5754342A (ja) | 1982-03-31 |
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