JPS6152975B2 - - Google Patents
Info
- Publication number
- JPS6152975B2 JPS6152975B2 JP10864178A JP10864178A JPS6152975B2 JP S6152975 B2 JPS6152975 B2 JP S6152975B2 JP 10864178 A JP10864178 A JP 10864178A JP 10864178 A JP10864178 A JP 10864178A JP S6152975 B2 JPS6152975 B2 JP S6152975B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- amount
- stress
- deformation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 20
- 150000002500 ions Chemical class 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 230000035882 stress Effects 0.000 description 16
- 238000005468 ion implantation Methods 0.000 description 7
- 238000002513 implantation Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10864178A JPS5536935A (en) | 1978-09-06 | 1978-09-06 | Manufacturing of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10864178A JPS5536935A (en) | 1978-09-06 | 1978-09-06 | Manufacturing of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5536935A JPS5536935A (en) | 1980-03-14 |
| JPS6152975B2 true JPS6152975B2 (enrdf_load_stackoverflow) | 1986-11-15 |
Family
ID=14489937
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10864178A Granted JPS5536935A (en) | 1978-09-06 | 1978-09-06 | Manufacturing of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5536935A (enrdf_load_stackoverflow) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57153429A (en) * | 1981-03-17 | 1982-09-22 | Nec Corp | Manufacture of semiconductor device |
| JPS6050420A (ja) * | 1983-08-31 | 1985-03-20 | Japan Electronic Control Syst Co Ltd | 自動車用燃費計 |
| JPH051786Y2 (enrdf_load_stackoverflow) * | 1985-02-12 | 1993-01-18 | ||
| JPH113869A (ja) * | 1997-06-11 | 1999-01-06 | Nec Corp | 半導体装置の製造方法 |
| JP4441109B2 (ja) * | 2000-12-08 | 2010-03-31 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
| JP4674894B2 (ja) * | 2004-12-28 | 2011-04-20 | パナソニック株式会社 | 固体撮像装置及びその製造方法 |
-
1978
- 1978-09-06 JP JP10864178A patent/JPS5536935A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5536935A (en) | 1980-03-14 |
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