JPS5536935A - Manufacturing of semiconductor device - Google Patents

Manufacturing of semiconductor device

Info

Publication number
JPS5536935A
JPS5536935A JP10864178A JP10864178A JPS5536935A JP S5536935 A JPS5536935 A JP S5536935A JP 10864178 A JP10864178 A JP 10864178A JP 10864178 A JP10864178 A JP 10864178A JP S5536935 A JPS5536935 A JP S5536935A
Authority
JP
Japan
Prior art keywords
film
substrate
stress
ion
decrease
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10864178A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6152975B2 (enrdf_load_stackoverflow
Inventor
Seiichi Isomae
Hiroshi Tamura
Yoichi Tamaoki
Michiyoshi Maki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10864178A priority Critical patent/JPS5536935A/ja
Publication of JPS5536935A publication Critical patent/JPS5536935A/ja
Publication of JPS6152975B2 publication Critical patent/JPS6152975B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)
JP10864178A 1978-09-06 1978-09-06 Manufacturing of semiconductor device Granted JPS5536935A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10864178A JPS5536935A (en) 1978-09-06 1978-09-06 Manufacturing of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10864178A JPS5536935A (en) 1978-09-06 1978-09-06 Manufacturing of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5536935A true JPS5536935A (en) 1980-03-14
JPS6152975B2 JPS6152975B2 (enrdf_load_stackoverflow) 1986-11-15

Family

ID=14489937

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10864178A Granted JPS5536935A (en) 1978-09-06 1978-09-06 Manufacturing of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5536935A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57153429A (en) * 1981-03-17 1982-09-22 Nec Corp Manufacture of semiconductor device
JPS6050420A (ja) * 1983-08-31 1985-03-20 Japan Electronic Control Syst Co Ltd 自動車用燃費計
JPS61135223U (enrdf_load_stackoverflow) * 1985-02-12 1986-08-23
GB2326280A (en) * 1997-06-11 1998-12-16 Nec Corp Ion implanted silicon nitride films
WO2002047170A1 (en) * 2000-12-08 2002-06-13 Hitachi, Ltd. Semiconductor device
JP2006186262A (ja) * 2004-12-28 2006-07-13 Matsushita Electric Ind Co Ltd 固体撮像装置及びその製造方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57153429A (en) * 1981-03-17 1982-09-22 Nec Corp Manufacture of semiconductor device
JPS6050420A (ja) * 1983-08-31 1985-03-20 Japan Electronic Control Syst Co Ltd 自動車用燃費計
JPS61135223U (enrdf_load_stackoverflow) * 1985-02-12 1986-08-23
GB2326280A (en) * 1997-06-11 1998-12-16 Nec Corp Ion implanted silicon nitride films
GB2326280B (en) * 1997-06-11 1999-09-15 Nec Corp Method for fabricating semiconductor device
WO2002047170A1 (en) * 2000-12-08 2002-06-13 Hitachi, Ltd. Semiconductor device
JP2006186262A (ja) * 2004-12-28 2006-07-13 Matsushita Electric Ind Co Ltd 固体撮像装置及びその製造方法

Also Published As

Publication number Publication date
JPS6152975B2 (enrdf_load_stackoverflow) 1986-11-15

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