JPS6152590B2 - - Google Patents
Info
- Publication number
- JPS6152590B2 JPS6152590B2 JP3752279A JP3752279A JPS6152590B2 JP S6152590 B2 JPS6152590 B2 JP S6152590B2 JP 3752279 A JP3752279 A JP 3752279A JP 3752279 A JP3752279 A JP 3752279A JP S6152590 B2 JPS6152590 B2 JP S6152590B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- substrate
- regions
- recesses
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 24
- 230000005669 field effect Effects 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1037—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure and non-planar channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3752279A JPS55130172A (en) | 1979-03-29 | 1979-03-29 | Insulated gate field effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3752279A JPS55130172A (en) | 1979-03-29 | 1979-03-29 | Insulated gate field effect transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55130172A JPS55130172A (en) | 1980-10-08 |
| JPS6152590B2 true JPS6152590B2 (nl) | 1986-11-13 |
Family
ID=12499869
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3752279A Granted JPS55130172A (en) | 1979-03-29 | 1979-03-29 | Insulated gate field effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55130172A (nl) |
-
1979
- 1979-03-29 JP JP3752279A patent/JPS55130172A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55130172A (en) | 1980-10-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100363353B1 (ko) | 반도체 장치 및 그 제조 방법 | |
| JP2570742B2 (ja) | 半導体装置 | |
| US5057884A (en) | Semiconductor device having a structure which makes parasitic transistor hard to operate | |
| US6924529B2 (en) | MOS transistor having a recessed gate electrode and fabrication method thereof | |
| JPH0621468A (ja) | 絶縁ゲート型半導体装置 | |
| US20060211197A1 (en) | Mos transistor and method of manufacturing the same | |
| JPS6152591B2 (nl) | ||
| JP2519284B2 (ja) | 埋め込みゲ―ト型ｍｏｓｆｅｔの製造方法 | |
| JPH06334136A (ja) | 半導体装置およびその製造方法 | |
| JP2579954B2 (ja) | Ｍｏｓトランジスタ | |
| JP2002016250A (ja) | 半導体装置及びその製造方法 | |
| KR100242379B1 (ko) | 수직찬넬 mosfet 및 그 제조방법 | |
| JP2515524B2 (ja) | 絶縁ゲ―ト電界効果トランジスタの製造方法 | |
| JPS6159543B2 (nl) | ||
| JPS6152590B2 (nl) | ||
| JPH05291518A (ja) | 半導体装置及びその製造方法 | |
| JP4290378B2 (ja) | 横型パワーｍｏｓトランジスタおよびその製造方法 | |
| JPH09191106A (ja) | 半導体装置およびその製造方法 | |
| KR940002839B1 (ko) | Soi형 반도체장치 및 그 제조방법 | |
| JP2004063918A (ja) | 横型ｍｏｓトランジスタ | |
| KR930022603A (ko) | 수직찬넬 mosfet 및 그 제조방법 | |
| JP2545987B2 (ja) | 高耐圧ｍｏｓ型半導体装置 | |
| JPS63211762A (ja) | 絶縁ゲ−ト型半導体装置とその製法 | |
| JP3017838B2 (ja) | 半導体装置およびその製造方法 | |
| JPH067596B2 (ja) | 半導体装置の製造方法 |