JPS6152565B2 - - Google Patents
Info
- Publication number
- JPS6152565B2 JPS6152565B2 JP54072654A JP7265479A JPS6152565B2 JP S6152565 B2 JPS6152565 B2 JP S6152565B2 JP 54072654 A JP54072654 A JP 54072654A JP 7265479 A JP7265479 A JP 7265479A JP S6152565 B2 JPS6152565 B2 JP S6152565B2
- Authority
- JP
- Japan
- Prior art keywords
- boron
- substrate
- impurity
- diffusion
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7265479A JPS55165627A (en) | 1979-06-09 | 1979-06-09 | Method for diffusing impurity into semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7265479A JPS55165627A (en) | 1979-06-09 | 1979-06-09 | Method for diffusing impurity into semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55165627A JPS55165627A (en) | 1980-12-24 |
| JPS6152565B2 true JPS6152565B2 (enrdf_load_stackoverflow) | 1986-11-13 |
Family
ID=13495576
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7265479A Granted JPS55165627A (en) | 1979-06-09 | 1979-06-09 | Method for diffusing impurity into semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55165627A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013168564A (ja) * | 2012-02-16 | 2013-08-29 | Ngk Insulators Ltd | 半導体装置及びその製造方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4840805A (enrdf_load_stackoverflow) * | 1971-09-23 | 1973-06-15 | ||
| CS164401B1 (en) * | 1971-10-07 | 1975-11-07 | Jiri Beranek | Method of 1-beta-d-arabinofuranosylcytosine's preparation |
| JPS5620689B2 (enrdf_load_stackoverflow) * | 1972-11-14 | 1981-05-15 |
-
1979
- 1979-06-09 JP JP7265479A patent/JPS55165627A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55165627A (en) | 1980-12-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5294571A (en) | Rapid thermal oxidation of silicon in an ozone ambient | |
| US4661177A (en) | Method for doping semiconductor wafers by rapid thermal processing of solid planar diffusion sources | |
| US6090690A (en) | Direct gas-phase doping of semiconductor wafers using an organic dopant source | |
| JPH1050989A (ja) | 半導体装置の製造方法 | |
| JP2947828B2 (ja) | 半導体装置の製造方法 | |
| JPH07101677B2 (ja) | 半導体装置の製造方法 | |
| US5256162A (en) | Apparatus for forming shallow electrical junctions | |
| JPS63166220A (ja) | 半導体装置の製造方法 | |
| JPS6152565B2 (enrdf_load_stackoverflow) | ||
| JPS6227727B2 (enrdf_load_stackoverflow) | ||
| JP3366053B2 (ja) | 半導体装置の製造方法 | |
| JP2810947B2 (ja) | 半導体装置の製造方法 | |
| JPH0526343B2 (enrdf_load_stackoverflow) | ||
| JPH0715997B2 (ja) | 半導体装置の製造方法 | |
| JPH03265131A (ja) | 半導体装置の製造方法 | |
| KR100256246B1 (ko) | 반도체 소자의 게이트 전극 형성 방법 | |
| JP2608049B2 (ja) | 薄いフィルムを形成する方法 | |
| KR100272276B1 (ko) | 반도체디바이스의제조방법 | |
| JP2926419B2 (ja) | 半導体装置の製造方法 | |
| JPS6190431A (ja) | 半導体装置の製法 | |
| JPH04333239A (ja) | 不純物拡散領域の形成方法 | |
| JPH06151348A (ja) | 半導体装置の製造方法 | |
| JPS6321825A (ja) | 半導体装置の製造方法 | |
| JPH07321060A (ja) | 硼素の拡散方法 | |
| JPH04170022A (ja) | 埋め込み層の形成方法 |