JPS6152565B2 - - Google Patents

Info

Publication number
JPS6152565B2
JPS6152565B2 JP54072654A JP7265479A JPS6152565B2 JP S6152565 B2 JPS6152565 B2 JP S6152565B2 JP 54072654 A JP54072654 A JP 54072654A JP 7265479 A JP7265479 A JP 7265479A JP S6152565 B2 JPS6152565 B2 JP S6152565B2
Authority
JP
Japan
Prior art keywords
boron
substrate
impurity
diffusion
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54072654A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55165627A (en
Inventor
Masamichi Manabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Electronic Corp filed Critical Pioneer Electronic Corp
Priority to JP7265479A priority Critical patent/JPS55165627A/ja
Publication of JPS55165627A publication Critical patent/JPS55165627A/ja
Publication of JPS6152565B2 publication Critical patent/JPS6152565B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251Diffusion into or out of group IV semiconductors
    • H01L21/2252Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
JP7265479A 1979-06-09 1979-06-09 Method for diffusing impurity into semiconductor Granted JPS55165627A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7265479A JPS55165627A (en) 1979-06-09 1979-06-09 Method for diffusing impurity into semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7265479A JPS55165627A (en) 1979-06-09 1979-06-09 Method for diffusing impurity into semiconductor

Publications (2)

Publication Number Publication Date
JPS55165627A JPS55165627A (en) 1980-12-24
JPS6152565B2 true JPS6152565B2 (enrdf_load_stackoverflow) 1986-11-13

Family

ID=13495576

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7265479A Granted JPS55165627A (en) 1979-06-09 1979-06-09 Method for diffusing impurity into semiconductor

Country Status (1)

Country Link
JP (1) JPS55165627A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013168564A (ja) * 2012-02-16 2013-08-29 Ngk Insulators Ltd 半導体装置及びその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4840805A (enrdf_load_stackoverflow) * 1971-09-23 1973-06-15
CS164401B1 (en) * 1971-10-07 1975-11-07 Jiri Beranek Method of 1-beta-d-arabinofuranosylcytosine's preparation
JPS5620689B2 (enrdf_load_stackoverflow) * 1972-11-14 1981-05-15

Also Published As

Publication number Publication date
JPS55165627A (en) 1980-12-24

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