JPS6148790B2 - - Google Patents
Info
- Publication number
- JPS6148790B2 JPS6148790B2 JP12715079A JP12715079A JPS6148790B2 JP S6148790 B2 JPS6148790 B2 JP S6148790B2 JP 12715079 A JP12715079 A JP 12715079A JP 12715079 A JP12715079 A JP 12715079A JP S6148790 B2 JPS6148790 B2 JP S6148790B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- anode
- cathode
- insulated gate
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000012535 impurity Substances 0.000 claims description 10
- 230000006698 induction Effects 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 7
- 230000000903 blocking effect Effects 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 claims description 5
- 241001530105 Anax Species 0.000 claims description 3
- 239000003990 capacitor Substances 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 238000005036 potential barrier Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7391—Gated diode structures
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12715079A JPS5650564A (en) | 1979-10-01 | 1979-10-01 | Insulated gate type static induction thyristor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12715079A JPS5650564A (en) | 1979-10-01 | 1979-10-01 | Insulated gate type static induction thyristor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5650564A JPS5650564A (en) | 1981-05-07 |
| JPS6148790B2 true JPS6148790B2 (US07223432-20070529-C00017.png) | 1986-10-25 |
Family
ID=14952851
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12715079A Granted JPS5650564A (en) | 1979-10-01 | 1979-10-01 | Insulated gate type static induction thyristor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5650564A (US07223432-20070529-C00017.png) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0511916Y2 (US07223432-20070529-C00017.png) * | 1986-08-29 | 1993-03-25 |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6144463A (ja) * | 1984-08-08 | 1986-03-04 | Toyo Electric Mfg Co Ltd | サイリスタのエミツタ短絡構造 |
| JPH0374877A (ja) * | 1989-08-15 | 1991-03-29 | Matsushita Electric Works Ltd | 半導体装置 |
| US5132238A (en) * | 1989-12-28 | 1992-07-21 | Nissan Motor Co., Ltd. | Method of manufacturing semiconductor device utilizing an accumulation layer |
| CN107579114B (zh) * | 2017-08-17 | 2020-05-26 | 电子科技大学 | 一种具有复合栅介质的栅控晶闸管 |
-
1979
- 1979-10-01 JP JP12715079A patent/JPS5650564A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0511916Y2 (US07223432-20070529-C00017.png) * | 1986-08-29 | 1993-03-25 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5650564A (en) | 1981-05-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4963951A (en) | Lateral insulated gate bipolar transistors with improved latch-up immunity | |
| US4620211A (en) | Method of reducing the current gain of an inherent bipolar transistor in an insulated-gate semiconductor device and resulting devices | |
| US5289019A (en) | Insulated gate bipolar transistor | |
| US5324966A (en) | MOS-controlled thyristor | |
| US4772926A (en) | Insulated gate static induction type thyristor | |
| JP4581179B2 (ja) | 絶縁ゲート型半導体装置 | |
| US4199774A (en) | Monolithic semiconductor switching device | |
| US4697199A (en) | Semiconductor protection device having a bipolar transistor and an auxiliary field effect transistor | |
| US5360746A (en) | Method of fabricating a semiconductor device | |
| JPH0126187B2 (US07223432-20070529-C00017.png) | ||
| JPH06268227A (ja) | 絶縁ゲート型バイポーラトランジスタ | |
| KR920003704B1 (ko) | 바이폴라 반도체 스윗칭장치와 그의 제조방법 | |
| JPS6148790B2 (US07223432-20070529-C00017.png) | ||
| US4550332A (en) | Gate controlled semiconductor device | |
| JP3977518B2 (ja) | 静電誘導半導体装置 | |
| JP2019161112A (ja) | 半導体装置 | |
| JP3657938B2 (ja) | 半導体装置 | |
| JPS6221276B2 (US07223432-20070529-C00017.png) | ||
| JP3103665B2 (ja) | 半導体装置 | |
| JP3124611B2 (ja) | Ｍｏｓアノードショート補助ゲート構造を有する半導体素子 | |
| JPH02135781A (ja) | 絶縁ゲート形縦形半導体装置 | |
| JPH0680817B2 (ja) | 半導体装置 | |
| JPH0846192A (ja) | 半導体装置 | |
| JP2637173B2 (ja) | 半導体装置 | |
| JP3588671B2 (ja) | 半導体装置 |
