JPS6142855B2 - - Google Patents
Info
- Publication number
- JPS6142855B2 JPS6142855B2 JP53043853A JP4385378A JPS6142855B2 JP S6142855 B2 JPS6142855 B2 JP S6142855B2 JP 53043853 A JP53043853 A JP 53043853A JP 4385378 A JP4385378 A JP 4385378A JP S6142855 B2 JPS6142855 B2 JP S6142855B2
- Authority
- JP
- Japan
- Prior art keywords
- oxygen
- wafer
- atoms
- oxygen concentration
- defects
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052760 oxygen Inorganic materials 0.000 claims description 86
- 239000001301 oxygen Substances 0.000 claims description 86
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 84
- 238000000034 method Methods 0.000 claims description 62
- 239000000758 substrate Substances 0.000 claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 20
- 238000010438 heat treatment Methods 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 238000005247 gettering Methods 0.000 claims description 8
- 235000012431 wafers Nutrition 0.000 description 74
- 125000004429 atom Chemical group 0.000 description 44
- 239000013078 crystal Substances 0.000 description 37
- 230000007547 defect Effects 0.000 description 31
- 230000003647 oxidation Effects 0.000 description 18
- 238000007254 oxidation reaction Methods 0.000 description 18
- 239000007787 solid Substances 0.000 description 17
- 230000000694 effects Effects 0.000 description 15
- 239000002244 precipitate Substances 0.000 description 14
- 238000009826 distribution Methods 0.000 description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- 229920005591 polysilicon Polymers 0.000 description 11
- 239000012535 impurity Substances 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 6
- 238000011084 recovery Methods 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- 239000002184 metal Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000001444 catalytic combustion detection Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 150000002926 oxygen Chemical class 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000004854 X-ray topography Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- -1 silicon ions Chemical class 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4385378A JPS54136274A (en) | 1978-04-14 | 1978-04-14 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4385378A JPS54136274A (en) | 1978-04-14 | 1978-04-14 | Semiconductor device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3784486A Division JPS61198638A (ja) | 1986-02-22 | 1986-02-22 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54136274A JPS54136274A (en) | 1979-10-23 |
| JPS6142855B2 true JPS6142855B2 (ko) | 1986-09-24 |
Family
ID=12675261
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4385378A Granted JPS54136274A (en) | 1978-04-14 | 1978-04-14 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54136274A (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02138443U (ko) * | 1989-04-20 | 1990-11-19 |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS575364A (en) * | 1980-06-13 | 1982-01-12 | Nec Kyushu Ltd | Mos integrated circuit device |
| US5468653A (en) * | 1982-08-24 | 1995-11-21 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method of making the same |
| JPS5935488A (ja) * | 1982-08-24 | 1984-02-27 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| US6346716B1 (en) * | 1982-12-23 | 2002-02-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor material having particular oxygen concentration and semiconductor device comprising the same |
| USRE38727E1 (en) | 1982-08-24 | 2005-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method of making the same |
| JPS59115574A (ja) | 1982-12-23 | 1984-07-04 | Semiconductor Energy Lab Co Ltd | 光電変換装置作製方法 |
| USRE37441E1 (en) | 1982-08-24 | 2001-11-13 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
| US6664566B1 (en) | 1982-08-24 | 2003-12-16 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method of making the same |
-
1978
- 1978-04-14 JP JP4385378A patent/JPS54136274A/ja active Granted
Non-Patent Citations (6)
| Title |
|---|
| APPLIED PHYSICS LETTERS=1977 * |
| APPLIED PHYSICS LETTERS=1977M2 * |
| APPLIED PHYSICS LETTERS=1977M7D15 * |
| JOURNAL OF APPLIED PHYSICS=1975M5 * |
| SOLID STATE SCIENCE AND TECHNOLOGY=1975M12 * |
| SOLID-STATE SCIENCE AND TECHNOLOGY=1976M12 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02138443U (ko) * | 1989-04-20 | 1990-11-19 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS54136274A (en) | 1979-10-23 |
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