JPS6142348B2 - - Google Patents

Info

Publication number
JPS6142348B2
JPS6142348B2 JP56155100A JP15510081A JPS6142348B2 JP S6142348 B2 JPS6142348 B2 JP S6142348B2 JP 56155100 A JP56155100 A JP 56155100A JP 15510081 A JP15510081 A JP 15510081A JP S6142348 B2 JPS6142348 B2 JP S6142348B2
Authority
JP
Japan
Prior art keywords
memory cell
inverse
discharge current
current
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56155100A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5857691A (ja
Inventor
Kazuhiro Toyoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56155100A priority Critical patent/JPS5857691A/ja
Priority to US06/425,649 priority patent/US4488268A/en
Priority to EP82305106A priority patent/EP0077144B1/en
Priority to DE8282305106T priority patent/DE3268848D1/de
Publication of JPS5857691A publication Critical patent/JPS5857691A/ja
Publication of JPS6142348B2 publication Critical patent/JPS6142348B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G11C11/415—Address circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
JP56155100A 1981-09-29 1981-09-30 半導体メモリ Granted JPS5857691A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP56155100A JPS5857691A (ja) 1981-09-30 1981-09-30 半導体メモリ
US06/425,649 US4488268A (en) 1981-09-29 1982-09-28 Semiconductor memory
EP82305106A EP0077144B1 (en) 1981-09-29 1982-09-28 Multi-emitter transistor memory device with word-line discharge current source
DE8282305106T DE3268848D1 (en) 1981-09-29 1982-09-28 Multi-emitter transistor memory device with word-line discharge current source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56155100A JPS5857691A (ja) 1981-09-30 1981-09-30 半導体メモリ

Publications (2)

Publication Number Publication Date
JPS5857691A JPS5857691A (ja) 1983-04-05
JPS6142348B2 true JPS6142348B2 (enExample) 1986-09-20

Family

ID=15598621

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56155100A Granted JPS5857691A (ja) 1981-09-29 1981-09-30 半導体メモリ

Country Status (1)

Country Link
JP (1) JPS5857691A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20250107433A (ko) * 2024-01-05 2025-07-14 이재홍 진공 배관용 클램프
KR20250111886A (ko) * 2024-01-16 2025-07-23 이재홍 진공 배관용 클램프

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20250107433A (ko) * 2024-01-05 2025-07-14 이재홍 진공 배관용 클램프
KR20250111886A (ko) * 2024-01-16 2025-07-23 이재홍 진공 배관용 클램프

Also Published As

Publication number Publication date
JPS5857691A (ja) 1983-04-05

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